2SC1678 ,Silicon NPN Power Transistors TO-220 packageFEATURES... Recommended for Output Stage Application ofAN " Transmitter.. High Power Gain.15.3 MAX. ..
2SC1684 ,TransistorTransistors. ‘ _ 2SC1684, 25C168525C1684, zs'ci 685Silicon NPN EpitaXial Planar Type, A _ . \I Pack ..
2SC1686 , Si NPN Planar
2SC1686 , Si NPN Planar
2SC1687 ,TransistorTransistors ‘ ‘ 2SC1687, _1 2SC16882$C1687, 25c1 688.Silicon NPN Epitaxial Planar Type- - ' , 1/ ‘ ..
2SC1706 , SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING
2SD2254 ,Silicon PNP epitaxial planar type Darlington(For power amplification)Absolute Maximum Ratings (T =25˚C) –nC1.0– 0.2Parameter Symbol Ratings Unit 0.6– 0.2Collector to b ..
2SD2257 ,TO-220 Plastic-Encapsulate Biploar TransistorsAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=2000 (MIN.)0 Low Saturation Voltage : ..
2SD2257 ,TO-220 Plastic-Encapsulate Biploar Transistors2SD2257TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPEHIGH POWER SWITCHING
2SD2258 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2259 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2261 ,NPN Epitaxial Planar Silicon Transistor Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC1678
Silicon NPN Power Transistors TO-220 package
TOSHIBA 4H)ISCRCTli:/0PT01 Sl, OE:0nrvrizso 3007955 n [r
9097250 TOSHIBA (DISCRETE/OPTO) 56C 07456 o 7~33yg5~{/
SILICON NPN EPITAXIAL PLANAR TYPE '. _ 2SCI 67 tr
27 MHz POWER AMPLIFIER APPLICATIONS. . 0nit in mm
_ IOSMAKI @16in
FE T t
A URES 5 f |_SL . - -
. Recommended for Output Stage Application of Jr, F t,1
. . ALyai
AM " Transmitter. il
. High Power Gain. I d
MAX IMUM RATI NGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT 2.54 2.54 g
Collector-Base Voltage VCBO 65 V , g f 1 z sl "
Co11eceoty-Emltter Voltage I -_'_'_..-4
RRP‘LOQ VCER 65 V 3
Emitter-Base Voltage VEBO 4.0 V
Collector Current TC 3 A 1. BABE
Base Current In 0.4 A a. COLLECTOR (HEAT SINK)
G. EMITTER
Emitter Current IE -3 A
Gollectng22¥§§CD§SSipati°n PC 10 il JIDEU T0-220AB
Junction Temperature Td 150 "c Eh” so -46
- o TOSHIBA a-10AIA
Storage Temperature Range Tstg -55 N 159 C Mounting Kit No. AC75
Weight , 1..9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current TCBO VCB=30V, Ic=0 . - - 10 PA
Collector Cut-off Current ICEO VCE=20V, IB=0 - - 100 "
Breakdown Co11eetor-Base V(mucgo Ic=1.0mA, IE=0 65 - -
Voltage ' co11eetor-Em1tter V(BR)CER Ic=10mA, RBE=109 65 - - ll
Emitter-Base V(BR)EBO IE=1.0mA, Ic=0 4.0 - -
hpg(1) vcEasv, Ic=0.5A (Note) 15 - -
hFE(2) VCE=5V, Ic=l.5A (Note) 10 - -
DC Current Gain
Collector Emitter v I =0.5A IB=O.05A - 0.5 1.0 v
Saturation Voltage CE(sat) C '
Transition Frequency fT VCE=5V, Ic=100mA 100 ... - MHz
Collector Output Capacitance Cob Vc3=10V, Igno, f=1MHz - 30 45 pF
Vcc=12V, Pi=0.4w
1 . - -
Output Power F g Po IDC=415mA(Typ.),f=27MHz 3.0 w
Note t Pulse Test t Pulse iadehfi300us, Duty Cycly S 2.0%
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA I0ISCRETE/0PT0y
9097250 TOSHIBA {DISCRETE/OPTO) “““"§BQ*U7£57 "ir-r-ay-tf'?
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Rg=50n Rr,=tion
i;:: itas mm ENAMEL COATED COPPER WIRE] 7%. 8 mm LD
La I Aas.mm ENAMEL COATED COPPER WIRE. tiT, Btttm LD _
La Atiatnm ENAMEL QpATED COPPER WIRE, TBT, 6 mm LD
RFC; Aassmm ENAMEL COATED COPPER WIRE. T6T, 5mm LD
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This Material Copyrighted By Its Respective Manufacturer
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