2SC1627A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC1653 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1653-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDNEC SILICON TRANSISTORS
'ELECTRONDEVICE 2SC'1653,2SC1l6tidll,
DISPLAY TUBE DRIVE,HIGH VOLTAGE S ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
PACKAGE DIMENSIONS o High Voltage l/CEO : 2SC1653 130 v, 2SC1654 160 v
in millimeter ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SD2216J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2217 ,NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGDATA SHEETDARLINGTON POWER TRANSISTOR2SD2217NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SD2222 ,Power DevicePower Transistors2SD2222Silicon NPN triple diffusion planar type darlingtonUnit: mmFor power amplif ..
2SD2226K , MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)
2SD2228 ,NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIERELECTRICAL CHARACTERISTICS (2T3 = 25 "C)
PARAMETER SYMBOL . . . I TEST CONDITIONS
VCB=16V,IE= ..
2SD2241 ,Silicon NPN Power Transistors TO-220F package2SD2241TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPESWITCHING
2SC1627A
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC1l627A
DRIVER STAGE AMPLIFIER APPLICATIONS
2SC1627A
Unit in mm
VOLTAGE AMPLIFIER APPLICATIONS 5.IMAX.
0 Complementary to 2SA817A. g
0 Driver Stage Application of 30 to 35 Watts Amplifiers.
MAXIMUM RATINGS (Ta=25°C) 2 t'..'i;
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 80 V ye'
Collector-Emitter Voltage VCEO 80 V _il,
Emitter-Base Voltage VEBO 5 V m .3, .3; l ii
Collector Current IC 400 mA 1. EMITTER sf
Base Current IB 40 mA 2. COLLECTOR
3. BASE
Collector Power Dissipation PC 800 mW
Junction Temperature Tj 150 "C JEDEAC TO-92MOD
Storage Temperature Range Tstg -55--150 "C JEIT -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown
Voltage V(BR)CEO IC=5mA, IB=0 80 - - V
hFE (1)
V =2V, I =50 A 70 - 240
DC Current Gain (Note) CE C m
hFE (2) VCE=2V, Ic=200mA 40 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC=200mA, IB=20mA - - 0.4 V
Base-Emitter Voltage VBE VCE=2V, Ic=5mA 0.55 - 0.8 V
Transition Frequency fT VCE = 10V, 10 = 10mA - 100 - MHz
Collector Output Capacitance Cob VCB=1OV, f = 1MHz - 10 - pF
(Note) : hFE (1) Classification
o : 70--140, Y : 120--240
TOSHIBA
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V) COLLECTOR CURRENT
COLLECTOR POWER DISSIPATXON
IC - VCE
COMMON EMITTER
Ta = 25°C
0 1 2 3 4 5 6 7 8
CoLLECToR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC /13 = 10
Ta=100°C
1 3 5 10 30 50 100 300 500
COLLECTOR CURRENT IC (mA)
PC - Ta
0.8 "s,
0.4 's,
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta CC)
DC CURRENT GAIN hFE
10 (mA)
COLLECTOR CURRENT
COLLECTOR CURRENT
2SC1627A
hFE - IC
COMMON EMITTER
VCE = 2V
Ta= 100°C
1 3 5 10 30 50 100 300 500
COLLECTOR CURRENT 10 (mA)
1C - VBE
COMMON EMITTER
250 VCE=2V
150 Ta=100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
2000) _llll Hllll
I MAX PULSED jk.
1000 f I ( ) Imsik
500 10 MAX
300 - (CONTI-
-NUOUS) y.f . "
100ms).k.
1 ll _ 'ss, 'ss,
DC OPERATION _
50 __(Ta=25°C) '
l I I l I I l I
.).K. SINGLE NONREPETITIVE
PULSE Ta =25''C 'N
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX
0.5 1 3 5 10 30 50 100 200
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC1627A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
