2SC1624 ,Silicon NPN Power Transistors TO-220 package-cicTiTEirCkTirsceiimiv0"0ir Si, olulcuo'ri'iesiio unmugg 3 Ih"ith'Iritli,'SlLlCONNPNPLANARTYPE2301 ..
2SC1627A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC1653 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1653-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDNEC SILICON TRANSISTORS
'ELECTRONDEVICE 2SC'1653,2SC1l6tidll,
DISPLAY TUBE DRIVE,HIGH VOLTAGE S ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
PACKAGE DIMENSIONS o High Voltage l/CEO : 2SC1653 130 v, 2SC1654 160 v
in millimeter ..
2SD2216 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2216J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2217 ,NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGDATA SHEETDARLINGTON POWER TRANSISTOR2SD2217NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SD2222 ,Power DevicePower Transistors2SD2222Silicon NPN triple diffusion planar type darlingtonUnit: mmFor power amplif ..
2SD2226K , MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)
2SD2228 ,NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIERELECTRICAL CHARACTERISTICS (2T3 = 25 "C)
PARAMETER SYMBOL . . . I TEST CONDITIONS
VCB=16V,IE= ..
2SC1624
Silicon NPN Power Transistors TO-220 package
-riTiriii:iirTshscec'riiv0PT0+ Sl, mi:lyuo'r?asio Dumuga 3 lil
""'-'=''-'''='''-'"'"''"""-"-'-"-------i
e 2S01624
SlLlCONNPNPLANARTYPE
- D .st -
9092250 TOSHIBA tDtSCRETE/t3PTO) 56C 07453 / 3.3 07
Unit in mm
MEDIUM POWER AMPLIFIER APPLICATIONS. 105w. 9’36in
DRIVER STAGE AMPLIFIER APPLICATIONS. .
59% -,ci1, 3 g ,
FEATURES: t n
High Breakdown Voltage l vCEo=120v (2861624) pi
Complementary to 2SA814 and 28A815. l
MAXIHUH RATINGS (Ta=25°C) -
CHARACTERISTIC SYMBOL RATING UNIT 154 254 g
Collector-Base 2301624 120 'n. a
v VCBo V 'l °J 1 2 3]
oltage 2301625 100 H 1 .5153115
Collector- 2SC1626 120 3
VCEO V
Emitter Voltage 2SC1625 100 1. BABE
Emitter-Base Voltage VEBO 5 V a. COLLECTOR (HEAT SINK)
Collector Current Ir 1 A G. E“ITTE“
Emitter Current IE -l A
Collector Power Dissipation P 15 w JEDEG TO-ZZOAB
(Tc=25°C) C EIAJ 50-45
Junction Temperature Td 150 "c TOSHIBA 2-10A1A
Storage Temperature Range ngg ~55N150 "c Mounting Kit No. AC75
Weight I 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°C
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-orf Current ICBO VCB=50V, IE=0 - - 1.0 PA
Emitter Cue-off Current IEBO VEB=5V, Ic=0 - - 1.0 "
Collector- 2sc1624 120 - -
Emitter Breakdown V(BR)CEO Ic=10mA, IB=O V
Voltage 2301625 100 - -
EmLtter-Base
Breakdown Voltage V(BR)EBO IE---lmA, 10:0 5 - - V
FE(1) vCE=5v, IC=150mA 70 - 240
(Note)
DC Current Gain
hFE(2) vcg=sv, Ic=500mA 40 - -
Collector-Emitter
Saturation Voltage VCE(sat) Ity=500nth, IB=50mA - - 0.5 ll
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 ll
Transition Frequency fT VCE=5V, TC=150mA 10 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=O, f=1 MHz - 20 - pF
Note '. hFE(1) Classificétion 0 l 70~140, Y I 120M240
TOSHIBA CORPORATIDN IlllllllIll||IIH|||lllllHlll|||llIIIHIllllflllllullIllllHIHIlIIHIIIIIll|IIIllllllllllllllllll|l||IIHIllllll||mlIlllllllIlllllIlllll|IllllIlllllllllIllIlllllIllllllllllllHllllIll|I|IlllllllIIIINHIIIIIIIHHII
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA {DESCRETE/OPTO}
9097250 TOSHIBA (DISCRETE IOPTO)
co 100
o a t 6 e 10
otoLLBt2Tott-BMITTmt VOLTAGE
lo _ vBE
o.a . 0.4. 0.6 tut ID IA
BAt0!l-BMITT1!lR VOLTAGE VBE M
COLLECTOR —EMI"r'rERI.
oii:lilmocri'iesin nnmusu 5 lil
2SC1624‘ZSC1625
GOO ooumo'u'
A EMITTER
: v03: tilr
F I. _
z a tfo'
5 n so
T 5 IO TO 50 100 BOO 500 1A "
COLLECTOR CURRENT Io (111A)
”M" VCE(eat) €310
'll, ' COMMON
SE 'as EMITTER
q IC/IB = 10
tr G' _
E i105 T0: -g5 C
a t5 IO JO 50 100 BOO 500 1000
COLLECTOR CURRENT To (mA)
SAFE OPERATING AREA
a.o IllllTl ll
IC MAX. (PULSED) M
IJ&IHI A "
Io . N
J? m (CONTINUOUS) k
00 P. / -
.9 9% o, R, ____"'
a 0.5 'Ctr,, '''ty Jr----
, g; ir,".tt
m b Rp
to as J l k
o 3tittTNamg " VI
m NONREPETITIVE PULSE k
. o Tc=25'C _
s .- N NN a
E oa :OURVES war BN DERATED , 'i' q:
til ~LINEARLY WITH INCREASE g-
g :m TEMPERATURE \ E 3:
(105 ch w.=1oo c, 853:
2801625 J'
'. am I I l I I I l
. t s a 5 " MO tio 100 200
T1t9LLRCTWt-HilMrT'NgR VGLTAGE v03 (v)
lllllllHIlIIHIIHHIlllmlllllllllllflllllllllIHIII|llllllllllllHllllllllllIHIIIIflllllllllllHll|llll|||HHllllllllIHIlIIHIIIIIIIHIHIlllHlllllflllllllllIllIlllllHllllllIIHHIlllllllIlllllllllllllmlllllll TO a HIBA CORPORATION
This Material Copyrighted By Its Respective Manufacturer
www.ic-phoenix.com
.
