2SC1569 ,Silicon NPN Power Transistors TO-220 packageSILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)COLOR TV CHROMA OUTPUT
2SC1571 ,VERY LOW NIOSE AMP APPLICATIONSSANYO SEMICONDUCTOR CORPUDDHLHE TrNPN Epitaxial Planar si/icon TransistorsVery Low Noise AmpApplica ..
2SC1573A ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.20.45+0.2–0.12SC1573 V 250 V 0.45 ..
2SC1573B ,Small-signal deviceTransistors2SC1573, 2SC1573A, 2SC1573BSilicon NPN triple diffusion planar typeFor high breakdown vo ..
2SC1573B ,Small-signal deviceFeatures0.7±0.1• High collector-emitter voltage (Base open) VCEO• High transition frequency fT■
2SC1621 ,HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta 1r= 25 oC)
CHARACTERISTIC SYMBOL . . TEST CONDITIONS
' Collector ..
2SD2142 , NPN Plastic Plastic-Encapsulate Transistor
2SD2144S , High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2144-S , High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2144STPU , High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2144S-V , High-current Gain MediumPower Transistor (20V, 0.5A)
2SD2150 T100S , Low Frequency Transistor (20V, 3A)
2SC1569
Silicon NPN Power Transistors TO-220 package
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2 SOI 5 6 ill
Unit in mm
COLOR TV CHROMA OUTPUT APPLICATIONS. 10.GMAX Ws.sectr2
FEATURES.' N V a ii '
. High Voltage '. VCE0=3OOV d g
. Small Collector Output Capacitance l cos=5.0pr(Typ.) ,4
. High Transition Frequency ' fT=100MHz (Typ.)
MAXIMUM RATINGS (Ta=25°C) E
254 254 b
CHARACTERISTIC SYMBOL RATING UNIT 4
it. 311:; 1 2 'sl
Collector-Base Voltage VCBO 300 V H u .. I
Collector-Emi- Voltage VCEO 300 ll 'fl
Emitter-Base Voltage VEBO 5 v l, BASE ,
2.00LLECTOR(HEAT SINK
Collector Current IC 150 mA & EMITTER
Emitter Current IE -150 mA
JEDED T0 - 220m
C 11 t -
o ec 01? Power Ta=25"c Pc 1.5 il EIAJ sc - 46
Dissipation Te=25''C 12.5 TOSHIBA 2 - 10A1A
Junction' Temperature To' 150 "c Mounting kit No. AC75
Storage Temperature Range Tstg -55s150 'c Weight I 1.9g
ELECTRI CAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 1.0 uA
Emitter Cut-off Current IEBO VEB=5V, Ic=0 - - 1.0 "
Co11eetor-Emitter = = - -
Breakdown Voltage V(BR)CEO ic SmA, IB 0 300 ll
DC Current Gain hFE VCE=10V, IC=50mA 40 -. 170
Collector-tutter = = - -
Saturation Voltage VCE(sat) Tc lOOmA, IB 20mA 1.0 ll
Base-Emitter - -
Saturation Voltage VBE(Sat) 1c=100mit, IB=20mh - - 1.2 V
Transition Frequency fT VCE=10V, Ic=30mA 40 100 - MHz
Collector Output Capacitance Cob 1lcB=50V,rE=0,f=1tfHz - 5.0 6.5 pF
llmlllllmllllllllllIIHIII||lllllllIXIIIIIIHI|llllflll|l|llllllll“I||IIIlllllllHlllllfll||lllllll|llllllllllllllllllllIllllllllllHIl|lllllllll|Ill|llllllllllllillllllllllllHllllllmlllllllllllllllllllllllllllll T08 HIBA CORPORATION
STATIC CHARACTERISTICS
COMMON
EMITTER
Ta = C
Ic-VCE (Low VOLTAGE REGION)
COMMON
EMITTER
Te.=atrc
COLLECTOR CURRENT 10 (m)
= 0.1%
COLLECTOR-EMITTER VOLTAGE VCE (v)
SAFE OPERAT ING AREA
-ro MAX.(PULSED ' ll J I In
300 l l I
g IC'MAX.‘ I I l 8-1ms
V - (com mucus)
o ill alumna
H 100 7 o
a 0 l R100tnt L"
2 F ttt l
5 50 w C)
D eo _ Ya INGLE e
o L. NONREPETITIVE t
m PULSE a l
Q Te = arc t'y l
g 10_ I _ s'
g CURVES MUST BE Iii g
0 5 DERATED LINEAL) - o
o - WITH INCREASE IN _ a
31. TEMPERATURE - >0 _H
IJJI I I I I I III! I I
ts 10 so 50 100 200 500 J00
C0LL1ilCT0RIMrT'Ngt VOLTAGE
Vom (V)
hFE - Ic
COMMON EMITTER
Veg: 10V
DC CURRENT GAIN hm
COLLECTOR CURRENT IC (IDA)
VCE(aat) - Ic
COMMON EMI
Ic/IB=10
l Ttgas 25'C
SATURATION VOLTAGE VCE(B&t)
COLLECTOR-‘EMI TTER
G 5 10 so tio 100
COLLECTOR CURRENT [0 (mA)
g " - IE
m En COMMON EMITTER
3 Tc=25'C
EMITTER CURRENT IE (m)
Cots - V08
f=1MHz
Tc=25'C
CAPACITANCE Con (p?)
(,3 0|
COLLECTOR OUTPUT
COLLECTOR-BASE VOLTAGE VCB (V)
TOSHIBA CD RPORATIDN IllllHlllllllllllllIIllllllllllll||IHI|llllllllllull||llllllllIlllll|Illlll||llllllllllllll|Illlllllllllllllllll|||lllllllHllll|Illlllllllllllllllllllllllllllllllll||IllllH|IllllllllllllllllllllllllllllllllH
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