2SC1047 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC1070 ,NPN SILICON TRANSISTORFEATURES . Packaged in tiny plastic mold package. 2 _ I,
I Easy & economical mounting realizable w ..
2SC1070 ,NPN SILICON TRANSISTORfeatures high
power gain, low noise, and excellent forward AGC
characteristics in a tiny fourlead ..
2SC108A , SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
2SC1096 ,NPN silicon transistor for audio frequency and low speed switching applications2SA63V2SC1096
ZSA634/ 2SC1096
PNP/NPN a:e'ftiivrry y :1 y 55732157/
PNP/NPN SILICON EPITAXIA ..
2SC1096 ,NPN silicon transistor for audio frequency and low speed switching applications2SA63V2SC1096
ZSA634/ 2SC1096
PNP/NPN a:e'ftiivrry y :1 y 55732157/
PNP/NPN SILICON EPITAXIA ..
2SD1963 , Low saturation voltage. Excellent DC current gain characteristics.
2SD1975 ,Power DeviceAbsolute Maximum Ratings T = 25°CC 5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volt ..
2SD1979 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1979 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1: BaseParameter Symbol Rating Unit2: EmitterCollector-base volt ..
2SD1980 , Power Transistor (100V , 2A)
2SD1980 , Power Transistor (100V , 2A)
2SC1047
