2SC1009A-T2B ,Silicon transistorFEATURES
0 High Gain Bandwidth Product: Fr = 250 MHz TYP.
0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T2B ,Silicon transistorSILICON TRANSISTOR
3 NEC _ ' .
2SC1 OOBA
ELECTRON “DEVICE l
(Sy,
243° y
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"r ivi)rk' ..
2SC1047 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC1070 ,NPN SILICON TRANSISTORFEATURES . Packaged in tiny plastic mold package. 2 _ I,
I Easy & economical mounting realizable w ..
2SC1070 ,NPN SILICON TRANSISTORfeatures high
power gain, low noise, and excellent forward AGC
characteristics in a tiny fourlead ..
2SC108A , SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
2SD1950 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C)
CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 ..
2SD1950-T1 ,Silicon transistorFEATURES _
q High DC Current Gain and good hFE' linearity.
hFE = 800 to 3 200 (@VCE = 5.0 V, IC = ..
2SD1953 ,NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
2SD1957 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SD1963 , Low saturation voltage. Excellent DC current gain characteristics.
2SD1975 ,Power DeviceAbsolute Maximum Ratings T = 25°CC 5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volt ..
2SC1009A-T1B-2SC1009A-T2B
