2SC1009A ,FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 High Gain Bandwidth Product: Fr = 250 MHz TYP.
0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T1B ,Silicon transistorFEATURES
0 High Gain Bandwidth Product: Fr = 250 MHz TYP.
0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T2B ,Silicon transistorFEATURES
0 High Gain Bandwidth Product: Fr = 250 MHz TYP.
0 Low Output Capacitance: Cob = 1.8 ..
2SC1009A-T2B ,Silicon transistorSILICON TRANSISTOR
3 NEC _ ' .
2SC1 OOBA
ELECTRON “DEVICE l
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243° y
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"r ivi)rk' ..
2SC1047 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC1070 ,NPN SILICON TRANSISTORFEATURES . Packaged in tiny plastic mold package. 2 _ I,
I Easy & economical mounting realizable w ..
2SD1947A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING AND LAMP, SOLENOID DRIVE APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=500--1500 (Ic=1A)_m'OtO ollmli::l+lLn ..
2SD1950 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C)
CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 ..
2SD1950-T1 ,Silicon transistorFEATURES _
q High DC Current Gain and good hFE' linearity.
hFE = 800 to 3 200 (@VCE = 5.0 V, IC = ..
2SD1953 ,NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
2SD1957 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SD1963 , Low saturation voltage. Excellent DC current gain characteristics.
2SC1009-2SC1009A
