2SB968 ,Power DeviceAbsolute Maximum Ratings T = 25°Ca(3.0)Parameter Symbol Rating Unit123Collector-base voltage (Emit ..
2SB968 ,Power DeviceFeatures• Possible to solder radiation fin directly to printed circuit board• High collector-emitte ..
2SB970 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB974 , isc Silicon PNP Darlington Power Transistor
2SB974. , isc Silicon PNP Darlington Power Transistor
2SB975 , isc Silicon PNP Darlington Power Transistor
2SD1910 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1910 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1911 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1912 ,LOW FREQUENCY POWER AMP APPLICATIONS
2SD1912 ,LOW FREQUENCY POWER AMP APPLICATIONS
2SD1913 ,60V/3A Low-Frequency Power Amplifier ApplicationsFeatures3.2• Wide ASO (Adoption of MBIT process).•Low saturation voltage.• High reliability.• High ..
2SB968
