2SB967 ,Silicon PNP epitaxial planar type(For low-frequency power amplification)Absolute Maximum Ratings (Ta=25˚C)nUnit: mm6.5– 0.2Parameter Symbol Ratings Unit5.354.35Collector ..
2SB968 ,Power DeviceAbsolute Maximum Ratings T = 25°Ca(3.0)Parameter Symbol Rating Unit123Collector-base voltage (Emit ..
2SB968 ,Power DeviceFeatures• Possible to solder radiation fin directly to printed circuit board• High collector-emitte ..
2SB970 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB974 , isc Silicon PNP Darlington Power Transistor
2SB974. , isc Silicon PNP Darlington Power Transistor
2SD1905 ,NPN Epitaxial Planar Type Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1910 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1910 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1911 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1912 ,LOW FREQUENCY POWER AMP APPLICATIONS
2SD1912 ,LOW FREQUENCY POWER AMP APPLICATIONS
2SB967
