2SB956 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB962 ,Silicon transistorapplications. _
1. Base -
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) T 'foll.ector
Collector to Bas ..
2SB962-Z ,PNP SILICON EPITAXIAL TRANSISTOR MP-3applications. _
1. Base -
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) T 'foll.ector
Collector to Bas ..
2SB963 ,Darlington transistorapplications.
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2. Collector
ABSOLUTE MAXIMUM RATINGS (Ta = ..
2SB966 , PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor
2SB967 ,Silicon PNP epitaxial planar type(For low-frequency power amplification)Absolute Maximum Ratings (Ta=25˚C)nUnit: mm6.5– 0.2Parameter Symbol Ratings Unit5.354.35Collector ..
2SD1898T100R , Power Transistor (80V, 1A)
2SD1899 ,Silicon power transistorFEATURES
q High hFE hFE= 100 to 400
0 Low VCE(sat) VCE(sat) Tr. 0.3 V
QUALITY GRADE
Standar ..
2SD1899 ,Silicon power transistorapplications.
l.' Base
2. Collector
T . -‘ _ . 3, Emitter
ABSOLUTE _MAXlMUNrRATINGS (Ta IT. ..
2SD1899 ,Silicon power transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
__---m
—---n-
_-_m--n
DC Current Gain hFE3* 1__ ..
2SD1899-Z ,TO-252 Plastic-Encapsulated Transistors
2SD1902 ,NPN Triple Diffused Planar Type Silicon Transistors AF Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB956
