2SB952A ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.54±0.31.0±0.11.4±0.10.4±0.1Parameter Symbol Rating Unit5.08±0. ..
2SB952A ,Power DeviceFeatures6.0±0.2 1.0±0.1• Low collector-emitter saturation voltage VCE(sat)• High-speed switching• N ..
2SB953A ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit1.3±0.21.4±0.12SB0953 V −40 VCollect ..
2SB954 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)nCParameter Symbol Ratings UnitCollector to 2SB954 –601.3– 0.21. ..
2SB956 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB962 ,Silicon transistorapplications. _
1. Base -
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) T 'foll.ector
Collector to Bas ..
2SD1898-P , NPN Silicon Power Transistors
2SD1898-q , NPN Silicon Power Transistors
2SD1898-R , NPN Silicon Power Transistors
2SD1898T100Q , Sample Program (Remote Control Transmission/Reception)
2SD1898T100R , Power Transistor (80V, 1A)
2SD1899 ,Silicon power transistorFEATURES
q High hFE hFE= 100 to 400
0 Low VCE(sat) VCE(sat) Tr. 0.3 V
QUALITY GRADE
Standar ..
2SB952A
