2SB949A ,Power DeviceAbsolute Maximum Ratings T = 25°Ca+0.20.5–0.1Parameter Symbol Rating Unit0.8±0.12SB0949 V −60 VCol ..
2SB950 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit2SB0950 V I ..
2SB950A ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SB951 ,Power DeviceAbsolute Maximum Ratings T = 25°CC+0.20.5–0.1Parameter Symbol Rating Unit0.8±0.12SB0951 V −60 VCol ..
2SB951A ,Power DeviceFeaturesφ 3.1±0.1• High forward current transfer ratio hFE• High-speed switching• Full-pack package ..
2SB951A. ,Power DevicePower Transistors2SB0951 (2SB951), 2SB0951A (2SB951A)Silicon PNP epitaxial planar type darlingtonUn ..
2SD1898 T100R , Power Transistor (80V, 1A)
2SD1898-P , NPN Silicon Power Transistors
2SD1898-q , NPN Silicon Power Transistors
2SD1898-R , NPN Silicon Power Transistors
2SD1898T100Q , Sample Program (Remote Control Transmission/Reception)
2SD1898T100R , Power Transistor (80V, 1A)
2SB949-2SB949A
