2SB907 ,Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = −2 V, I = −1 A) FE (1) CE C Low satur ..
2SB908 ,Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications Unit: mmHammer Drive, Pulse Motor Drive
2SB910M , Epitaxial Planar PNP Silicon Translstors
2SB911M , MEDIUM POWER TRANSISTOR(-32V, -2A)
2SB912 ,PNP Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB919 ,PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1859 , Medium Power Amp. Epitaxial Planar NPN Silicon Transistors
2SD1862 , Medium Power Transistor (32V, 2A)
2SD1863 , Power Transistor (80V, 1A)
2SD1863 , Power Transistor (80V, 1A)
2SD1866 , Medium Power Transistor (Motor, Relay drive) (60±10V, 2A)
2SD1867 , Power Transistor (100V , 2A)
2SB907
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB907 Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A) Complementary to 2SD1222.
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
BASE
EMITTER
COLLECTOR
