2SB906 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power ..
2SB906 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power ..
2SB907 ,Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = −2 V, I = −1 A) FE (1) CE C Low satur ..
2SB908 ,Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications Unit: mmHammer Drive, Pulse Motor Drive
2SB910M , Epitaxial Planar PNP Silicon Translstors
2SB911M , MEDIUM POWER TRANSISTOR(-32V, -2A)
2SD1858 , Medium Power Transistor (32V, 1A)
2SD1859 , Medium Power Amp. Epitaxial Planar NPN Silicon Transistors
2SD1862 , Medium Power Transistor (32V, 2A)
2SD1863 , Power Transistor (80V, 1A)
2SD1863 , Power Transistor (80V, 1A)
2SD1866 , Medium Power Transistor (Motor, Relay drive) (60±10V, 2A)
2SB906
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)
2SB906 Audio Frequency Power Amplifier Application Low collector saturation voltage
: VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A) High power dissipation: PC = 20 W (Tc = 25°C) Complementary to 2SD1221 ハイブリッド対応外形の (B) 2SB906 (LB) もあります。
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
