2SB834 ,POWER TRANSISTORS(3.0A,60V,30W)APPLICATIONS. Unit in mm10.3MA . 953.6102Low Collector Saturation Voltage: VCE(sat) = - 1.0V (Max.) ..
2SB834 ,POWER TRANSISTORS(3.0A,60V,30W)ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 1.9gCHARACTERISTIC SYMBOL TEST CONDITION UNITCollect ..
2SB834 ,POWER TRANSISTORS(3.0A,60V,30W)applications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SB852K , High-gain Amplifier Transistor (−32V, −0.3A)
2SB852K , High-gain Amplifier Transistor (−32V, −0.3A)
2SB856 , isc Silicon PNP Power Transistor
2SD1820 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1820 V I ..
2SD1820A ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca(0.65)(0.65)1.3±0.1Parameter Symbol Rating Unit2.0±0.22SD1820 V ..
2SD1823 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1825 ,NPN Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1826 ,NPN Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1828 ,NPN Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB834
POWER TRANSISTORS(3.0A,60V,30W)
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB834
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
Unit in mm
IC3MA . ¢3.6i0.2
q Low Collector Saturation Voltage A .
. - - - - - - 5 EM _ -
. Vows”) - 1.0V (Max.) at IC - 3A, IB - 0.3A {511 g R
. Collector Power Dissipation ttf E F
.' PC = 30W (Tc = 25°C) :5
o Complementary to 2SD880. E ! i
MAXIMUM RATINGS (Ta = 25°C) © l ili
1.5 MAX . ' I 55'
CHARACTERISTIC SYMBOL RATING UNIT Tire I
Collector-Base Voltage VCBO -60 V 2.51 254 E
Collector-Emi; Voltage VCEO -60 V :3, g. 3'
Emitter-Base Voltage VEBO -7 V d Jr 1:531
Collector Current 1C -3 A l. B ASE g
Base Current IB --0.5 A 2. COLLECTOR(HEAT SINK)
o 3. EMITTER
Collector Power Ta=25 C P 1.5 W
Dissipation Tc=25°C C 30 JEDEC TO-220AB
Junction Temperature Tj 150 "C EIAJ SC-46
Storage Temperature Range Tstg -55--150 "C TOSHIBA 2-10A1A
Mounting kit N0.AC75
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB= -60V, IE =0 - - - 100 PA
Emitter Cut-off Current IEBO VEB= -7V, IC =0 - - - 100 PA
Collector-Emitter - -
Breakdown Voltage V(BR)CEO IC - - 50mA, IB - 0 -60 - - V
hFE(1)
= - = - . A - 2
DC Current Gain (Note) VCE 5V, IC 0 5 60 00
hFE(2) VCE = -5V, IC = -3A 20 - -
Collector-Emi;
Saturation Voltage VCE(sat) IC-- -3A, IB - -0.3A - -0.5 - 1.0 V
Base-Emitter Voltage VBE VCE = -5V, IC = -0.5A - -0.7 - 1.0 V
Transition Frequency fT VCE = -5V, IC = -0.5A - 9 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = lMHz - 150 - pF
Turn-on Time ton INPUT {lg OUTPUT - 0.4 -
S it hi 20ps I - c:
W1 C mg . B2 1B2 to
Time Storage Time tstg IBIIEFL - - 1.7 - #S
. -IBI =IB2 =0.2A V = _30v
Fall Time tf DUTY CYCLESI% CC - 0.5 -
Note : hFE(1) Classification 0 .' 60--120, Y : 100-200
1 2001-05-24
TOSHIBA 253834
IC - VCE a Rth(t) - t
2 a 100
v COMMON E (1) WITHOUT HEAT SINK
EMITTER w 1 T =25°c
0 -70 -60 Tc=25''C m' (2) INFINITE HEAT SINK ( ) a
E 50 -40 _1 t 10
3:” -30 Egg (2) Tc=25°C
te -20 E C9
if, 2i"
g I3 = - 10mA E n?
Q o -1 -2 -3 -4 -5 -6 5 io-3 10-2 IO-l 1 10 1o2
COLLECTOR-EMITTER VOLTAGE VCE (V) TIME t (s)
hFE - IC SAFE OPERATING AREA
Q500 ~10 l!!!!! ll,ll,ll,
g 300 Tc=100 C IC MAX.(PULSED)ht. Irnsy.(.
a 25 'iii, -5 I I I I I I \ l 10ms).kl
2 0 10 MAX (CONTINUOUS) l ER/’100ms§<
© -25 - . '.e.
a B - 3 f Isy.t.
E 100 2; N x
m 33 ?:s l
g “5 DC OPERATION F, l
g 50 COMMON EMITTER o I J?ths'c N)), k \
© VCE---5V M -1 'xh Ix
30 8 >:< SINGLE NONREPETITIVE h
- - - _ - ,
0.02 0.1 0.3 1 a g PULSE Tc=25°C t\
COLLECTOR CURRENT IC (A) g -0.5 CURVES MUST BE DERATED l
VCE(sat) - IC 0 LINEARLY WITH INCREASE
o IN TEMPERATURE. V MAX.
g: -0 5 COMMON EMITTER -0.2 CE0( )
g; IC/IB=10 -1 -3 -10 -30 -100
'd G -0.3 COLLECTOR-EMITTER VOLTAGE VCE (V)
n: E PC - Ta
E o 40
:> 0 l co Te=Ta
Em - . INFINITE HEAT SINK
£222 35 (2) 300x300x2nun At
359 HEAT SINK
es -0.05 p; - co CD 200 X200X2mm At
§§> o 30 HEAT SINK
j e: T 100x100x1mm At
0 -0 02 g , HEAT SINK
D '_002 .-0.1 -0.3 -1 -3 'a' \ co lOOXIOOXImm Fe
. . . w. 25 N HEAT SINK
COLLECTOR CURRENT IC (A) DA \ © 50M50M1mm A6
'git "N HEAT SINK
2 IC - VBE g 20- Q) V CO 50X50X1mm Fe
v -3.0 org V N HEAT SINK
Q COMMON EMITTER ci. - n "N, Cfi) NO HEAT SINK
_ M 'do 'N.
E. VCE-- -6V :3) 15 I "N ,
a - T =1 ° -
‘52 2.0 c 00 c 5 <4) N
05 ti, 10 - Cs) \\\\\\\ N
U - co _ ttsth::, \
t'j:i-1m0 5-T, -czsiiit:i.i,iii:i:ii'ite)r,
g - é '""''c'1tttrr2ts't. cN.
o o o ,
0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 25 50 75 100 125 150 175
BASE-EMITTER VOLTAGE VBE (V) AMBIENT TEMPERATURE Ta (°C)
2 2001-05-24
TOSHIBA 253834
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-05-24
www.ic-phoenix.com
.
