2SB810 ,PNP SILICON TRANSISTORFEATURES _ q High total power dissipation.
‘PT = 350 mW
. High hFE and low VcEisat).
hrE0c=-100 ..
2SB815 ,PNP Epitaxial Planar Silicon Transistors General-Purpose AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SB815-6-TB-E , Bipolar Transistor
2SB817 ,POWER TRANSISTORS(12A,140V,100W)Ordering number:680FPNP Epitaxial Planar Silicon TransistorsNPN Triple Diffused Planar Silicon Tran ..
2SB817 ,POWER TRANSISTORS(12A,140V,100W)Features Package Dimensions · Capable of being mounted easily because of one-unit:mmpoint fixing ty ..
2SB817 ,POWER TRANSISTORS(12A,140V,100W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1816T-TL-E , High-Current Switching Applications
2SD1817 ,NPN Epitaxial Planar Silicon Transistor Driver ApplicationsFeatures [2SD1817]6.52.3 · High DC current gain. 5.00.54 · Small and slim package permitting the 2S ..
2SD1818 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 "C)
SYMBOL
CHARACTERISTIC
Collector Saturation Voltage ..
2SD1819 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SD1819A ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1820 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1820 V I ..
2SB810
