2SB806 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES
0 World Standard Miniature Package : SOT-89,
PACKAGE DIMENSIONS .
. High Collector ..
2SB806-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta 1'lL" 25 ''cy
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST COND ..
2SB808 ,Low-Voltage Large-Current Amp Applications
2SB810 ,PNP SILICON TRANSISTORFEATURES _ q High total power dissipation.
‘PT = 350 mW
. High hFE and low VcEisat).
hrE0c=-100 ..
2SB815 ,PNP Epitaxial Planar Silicon Transistors General-Purpose AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SB815-6-TB-E , Bipolar Transistor
2SD1815 ,NPN Epitaxial Planar Silicon Transistors NPN Epitaxial Planar Silicon TransistorsOrdering number:EN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Swit ..
2SD1815S-TL-E , High-Current Switching Applications
2SD1815T-TL-E , High-Current Switching Applications
2SD1816 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsOrdering number:EN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Swit ..
2SD1816 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1816 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsFeatures · Low collector-to-emitter saturation voltage. · Good linearity of h .FE · Small and slim ..
2SB805-2SB806
