2SB792A ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SB0792 V I ..
2SB794 , PNP SILICON DARLINGTON POWER TRANSISTORS
2SB798 , Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA)
2SB798 , Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA)
2SB799-T2 ,Silicon transistorFEATURES
0 World Standard Miniature Package
: SOT--89
0 Low Colleétor Saturation Noltage
I VCE( ..
2SB800 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. ' _ UNIT _ I TEST CON ..
2SD1784 ,Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier ApplicationsApplications High DC current gain: h = 4000 (min) (V = 2 V, I = 150 mA) FE CE C Low saturati ..
2SD1788 , Darlington Transistor(± 4A NPN)
2SD1788. , Darlington Transistor(± 4A NPN)
2SD1789 , Darlington Transistor(± 4A NPN)
2SD1790 , Darlington Transistor(± 4A NPN)
2SD1790 , Darlington Transistor(± 4A NPN)
2SB792A
