2SB734 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 ''C)
CHARACTER ISTIC
DC Current Gain
DC Current Gain
Ga ..
2SB736 ,AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)FEATURES
0 Micro package.
1 , High DC current gain. hFE : 200 TYP. (I/ce =- 1.0 V, IC =- sd m ..
2SB736A ,AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)NEG '." " ' SILICON TRANSISTORS
--,a;"'R0''r" H 1 233736'283736A
AUDIO FREQUENCY POWER AMPLIF ..
2SB736A-T1B ,Silicon transistorNEG '." " ' SILICON TRANSISTORS
--,a;"'R0''r" H 1 233736'283736A
AUDIO FREQUENCY POWER AMPLIF ..
2SB736A-T2B ,Silicon transistorFEATURES
0 Micro package.
1 , High DC current gain. hFE : 200 TYP. (I/ce =- 1.0 V, IC =- sd m ..
2SB736-T1B ,Silicon transistorNEG '." " ' SILICON TRANSISTORS
--,a;"'R0''r" H 1 233736'283736A
AUDIO FREQUENCY POWER AMPLIF ..
2SD1742 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit2SD1742 V I ..
2SD1747 ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.3±0.2 0˚ to 0.15˚Parameter Symbol Rating Unit4.6±0.42SD1747 V ..
2SD1754 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit2SD1754 V I ..
2SD1757K , Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). Optimal for muting.
2SD1757K , Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). Optimal for muting.
2SD1757K , Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). Optimal for muting.
2SB734
