2SB605 ,PNP SILICON TRANSISTORFEATURES . High Total Power Dissipation and High Breakdown Voltage: (37293331 (0103,)
1.0 w at 25 ..
2SB605 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta TT. 25 ''C)
CHARACTERISTIC, . MAX. TEST CONDITIONS
DC Current Ga ..
2SB621 ,750mW NPN silicon transistorAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2SB0621 V −30 VCollector-base voltag ..
2SB624 ,AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDSILICON TRANSISTOR
253624
AUDIO FREQUENCY POWER AMPLIFIER
PNP SILICON EPITAXIAL TRANSISTOR
..
2SB624-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 oC)
VCBO - 30 V
VCEO -- 25 v
VEBO - 5.0 V
IC - 700 mA
PT 2 ..
2SB624-T2B ,Silicon transistorSILICON TRANSISTOR
253624
AUDIO FREQUENCY POWER AMPLIFIER
PNP SILICON EPITAXIAL TRANSISTOR
..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsFeatures4.51.5•1.6Adoption of FBET, MBIT processes.•Low collector-to-emitter saturation voltage.•La ..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SD1623S-TD-E , High-Current Switching Applications
2SD1624 ,NPN Epitaxial Planar Silicon Transistors High Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1624 ,NPN Epitaxial Planar Silicon Transistors High Current Switching ApplicationsFeatures · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast ..
2SD1624 ,NPN Epitaxial Planar Silicon Transistors High Current Switching ApplicationsOrdering number:2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switch ..
2SB605
