2SB1667 ,TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)TOSHIBA 2SB1667(SM)2531667(SM)AUDIO FREQUENCY POWER AMPLIFIER
2SB1669 ,Power transistor PNP 60V/3A MP-25DATA SHEETSILICON POWER TRANSISTOR2SB1669PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SB1678 ,For low-frequency amplificationElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector cu ..
2SB1679 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1690K , General purpose amplification (-12V, -2A)
2SB1691 , Silicon PNP Epitaxial Planer Low Frequency Power Amplifier
2SD1484K T146R , Medium Power Transistor (50V,0.5A)
2SD1484K T146R , Medium Power Transistor (50V,0.5A)
2SD1484KT146R , Medium Power Transistor (50V,0.5A)
2SD1484K-T146R , Medium Power Transistor (50V,0.5A)
2SD1489 , Silicon NPN Epitaxial
2SD1504 , Silicon NPN Epitaxial
2SB1667
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
TOSHIBA 2SB1667(SM)
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SB1l667(SMl
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm
0 Low Collector Saturation Voltage 10.3MAX.
VCE (sat) = -1.7V (Max.) (IC = -3A, 1B = -0.3 A) "''-""o+---
MAXIMUM RATINGS (Ta = 25°C) F
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V g 1 2 3 -yk
Emitter-Base Voltage VEBO -7 V -- "11m i!
Collector Current 10 -3 A ' i *
Base Current IB -0.5 A
Collector Power Ta = 25°C PC 1.5 W ;- ESSLEECTOR
Dissipation Te = 25°C 25 3: EMITTER
Junction Temperature Tj 150 "C
0 JEDEC -
Storage Temperature Range Tstg -55--150 C
EIAJ -
TOSHIBA 2- 10S2
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-09-30 1/3
TOSHIBA
2SB1 667(SM)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -60 V, IE = 0 - - -100 PA
Emitter Cut-off Current IEBO VEB = -7V, 10 = 0 - - -100 pA
Collector-Emi;
Breakdown Voltage V(BR) CEO IC - -50 mA, 1B - 0 -60 - - V
hFE (1)
v =-5V.1r---0.5A 60 - 30
DC Current Gain (Note) CE 5 ' C 5 0
hFE (2) VCE = -5V, 10 = -3A 20 - -
Collector-Emitter
Saturation Voltage VCE (sat) IC - -3 A, 1B - -0.3A - -0.5 -1.7 V
Base-Emitter Voltage VBE VCE = -5A, 10 = -0.5A - -0.7 -1.0 V
Transition Frequency fT VCE = -5V, IC = -0.5A - 9 - MHz
Collector Output Capacitance C VCB = -10 V, IE = o, - 150 - pF
ob f = 1 MHz
. 1B1 OUTPUT
Turn-on Time ton INPUT 'ere g, - 0.4 -
IB2 1B2 H
Switching ' 1.qu
Time Storage Time tstg BI H VCC = - 30V 1.7 ps
20 ,us
. "IBl = 1B2 = 0.2 A,
F 11 T t - 0.5 -
a me f DUTY CYCLE s 1%
(Note) : hFE(1) Classification o : 60--120, Y : 100--200
1999-09-30 2/3
TOSHIBA
2SB1667(SM)
IC - VCE
COMMON
EMITTER
-60 Te = 25°C
IB = -10mA
COLLECTOR CURRENT 10 (A)
0 - 1 - 2 - 3 - 4 - 5
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
500 VCE = -5 v
ji) Tc = 100°C
C) -25
‘53 100
-0.02 -0.1 -0.3 -1 -3
COLLECTOR CURRENT 10 (A)
IC - VBE
// COMMON
EMITTER
-1.0 /
0 -0.4 -0.8 -1.2 -1.6
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
COMMON EMITTER
- 0.5 1C / IB = 10
VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
-0.02 -0.1 -0.3 -1 -3 -5
COLLECTOR CURRENT 10 (A)
1999-09-30 3/3
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