2SB1642 ,Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NISapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SB1642 ,Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NISELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SB1645 ,Silicon PNP triple diffusion planar type Darlington(For power amplification)Absolute Maximum Ratings T = 25°CC 0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector to ..
2SB1655 , Silicon PNP Power Transistors
2SB1655 , Silicon PNP Power Transistors
2SB1655. , Silicon PNP Power Transistors
2SD1470 , Silicon NPN Epitaxial, Darlington
2SD1472 , Silicon NPN Epitaxial, Darlington
2SD1472 , Silicon NPN Epitaxial, Darlington
2SD1474 ,Power DeviceAbsolute Maximum Ratings T = 25°C 1.3±0.2C1.4±0.1Parameter Symbol Rating Unit+0.20.5–0.10.8±0.1Col ..
2SD1480 ,Silicon NPN triple diffusion planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C– +0.20.5 –0.10.8– 0.1Parameter Symbol Ratings UnitCollector ..
2SD1481 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SD1481NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SB1642
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NIS
TOSHIBA 2531642
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SB1642
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm
0 Low Collector Saturation Voltage
: VCE (sat)= -1.5V (Max.) (10: -2.5A, IB= -0.25A)
o Collector Power Dissipation : PC=25W(Te=250C)
o Collector Metal (Fin) is Fully Covered with Mold Resin
MAXIMUM RATINGS (Tc=25°C)
0.75 10.15
CHARACTERISTIC SYMBOL RATING UNIT 2.5“ 0.25 2.54 , 0.25 '
Collector-Base Voltage VCBO - 60 V '/2 1 2 3 , eM
Collector-Emitter Voltage VCEO - 60 V E-E::[g
Emitter-Base Voltage VEBO - 7 V t - 3
Collector Current IC - 4 A l. B ASE
Base Current IB - 1 A 2. COLLECTOR
Collector Power Ta = 25°C P 2.0 W 3. EMITTER
Dissipation Tc=25°C C 25 JEDEC -
Junction Temperature Tj 150 T JEIT A SC-67
Storage Temperature Range Tstg -55--150 C T O SHIB A 2-10R1A
Weight : 1.7g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 60V, IE = 0 - - - 10 PA
Emitter Cut-off Current IEBO VEB = - 7V, IC = 0 - - - 10 PA
Collector-Emi;
Breakdown Voltage V (BR) CEO IC - - 10mA, IB - 0 - 60 - - V
. hFE (1) VCE = -5V, 10 = -0.5A 100 - 320
DC Current Gain hFE (2) VCE = - 5V, IC-- - 3A 20 - -
Co11eetor-Emitter
Saturation Voltage VCE (sat) 1C - - 2.5A, IB - - 0.25A - - 0.7 - 1.5 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 0.5A - -0.7 5 - 1.0 V
Transition Frequency fT VCE = - 5V, 10 = - 0.5A - 9 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = lMHz - 5O - pF
1 2001-10-29
TOSHIBA
IC - VCE
COMMON
a EMITTER
v Tc=25°C
0 -1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - 1C
C COMMON
Tc=100°
500 EMITTER
[x] 25 VCE---1V
-0.03 _0.1 _0.3 -1 -3 -10
COLLECTOR CURRENT 10 (A)
Rth (t) - tw
(1) NO HEATSINK
(2) INFINITE HEAT
1) Ta=25°C
2) Te = 25°C
TRANSIENT THERMAL RESISTANCE
Rth (t) (°C/W)
10‘3 10-2 IO-I 1 10 10
TIME t (s)
10 (A)
COLLECTOR CURRENT
VCE (sat) (V)
COLLECTOR—EMITTER SATURATION
VOLTAGE
IC - VBE
I COMMON
EMITTER
/ f VCE=-5V
-3.0 //
-2.0 Tc=100°C f (
-1.0 / "25
0 _0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
COMMON
EMITTER
- 1 IC / IB = 20
-0.1 To: 100°C
COLLECTOR CURRENT 10 (A)
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
10 :10 MAX. (PULSE)y.4
- I I I I 1 , \ & =
.10 MAX. 's N J""
5 - (CONTINUOUS) N
\ 10ms y.t.
\ ht t . . -
N, ll l 100ms).k.
1 DC OPERATION R,. J,
Tc=25°C \ ,
I I I I III Ix
0.5 l _ I I III l
.)K. SINGLE l
NONREPETITIVE J
0.3 PULSE Tc=25°C l
CURVES MUST BE -
DERATED LINEARLY VCEO
WITH INCREASE IN MAX.
TEMPERATURE. 1 III
1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2531642
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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www.loq.com
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