2SB1640 ,Silicon PNP Power Transistors ITO-220 package25316409CR'tfidi,nAUDIO FREQUENCY POWER AMPLIFIER Unit in mmT.nw Qatnrntinn antnc‘n . Vnm 1,...sz _ ..
2SB1642 ,Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NISapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SB1642 ,Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NISELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SB1645 ,Silicon PNP triple diffusion planar type Darlington(For power amplification)Absolute Maximum Ratings T = 25°CC 0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector to ..
2SB1655 , Silicon PNP Power Transistors
2SB1655 , Silicon PNP Power Transistors
2SD1470 , Silicon NPN Epitaxial, Darlington
2SD1472 , Silicon NPN Epitaxial, Darlington
2SD1472 , Silicon NPN Epitaxial, Darlington
2SD1474 ,Power DeviceAbsolute Maximum Ratings T = 25°C 1.3±0.2C1.4±0.1Parameter Symbol Rating Unit+0.20.5–0.10.8±0.1Col ..
2SD1480 ,Silicon NPN triple diffusion planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C– +0.20.5 –0.10.8– 0.1Parameter Symbol Ratings UnitCollector ..
2SD1481 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SD1481NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SB1640
Silicon PNP Power Transistors ITO-220 package
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SB1640
AUDIO FREQUENCY POWER AMPLIFIER
Unit in mm
0 Low Saturation Voltage : VCE (sat)" -1.5V (Max.)
(10 = -2A, IB = -0.2A)
0 Collector Metal (Fin) is Covered with Mold Region g.
0 Complementary to 2SD2525 5?;
MAXIMUM RATINGS (Tc = 25°C) q
CHARACTERISTIC SYMBOL RATING UNIT is'.
Collector-Base Voltage VCBO - 60 V g J -
Collector-Emi) Voltage VCEO -60 V 1 2 3 il. 0.5 tg:12
Emitter-Base Voltage VEBO -7 V nta + "io- 1 BASE
Collector Current 10 -3 A 3 2: COLLECTOR
Base Current IB -0.5 A 3. EMITTER
Collector Power Dissipation PC 1.8 W JEDEC -
J unction Temperature Tj 150 "C JEITA -
Storage Temperature Range Tstg -55--150 "C TOSHIBA 2-10TIA
Weight : 1.5g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -60V, IE =0 - - -10 PA
Emitter Cut-off Current IEBO VEB = -7V, IC =0 - - -10 pA
Collector-Emi) Breakdown - -
Voltage V (BR) CEO IC - -50mA, IB - 0 -60 - - V
h = - I = - . A 1 - 2
DC Current Gain FE (1) VCE 5V, C 0 5 00 3 0
hFE (2) VCE = -5V, IC = -2A 15 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - - 2A, IB - - 0.2A - - 1.0 - 1.5 V
Base-Emitter Voltage VBE VCE = -5V, IC = -0.5A - -0.7 5 - 1.0 V
Transition Frequency fT VCE = -5V, 10 = -0.5A - 9 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 50 - pF
2001 -1 0-29
TOSHIBA 2531640
IC - VCE hFE - IC
Ta-- 100°C
COMMON EMITTER
30 VCE=-5V
-0.01 -0.03 -0.1 -0.3 -1 -3 -5
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
COMMON EMITTER
Ta = 25°C
0 -1 - 2 - 3 - 4 -5 -6
IC - VBE
C0LLECT0R-EMITTER VOLTAGE VCE (V)
COMMON EMITTER
VCE = - 5V
O -0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR CURRENT 10 (A)
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IC /IB = 10
rth - tw
CURVES SHOULD BE APPLIED
IN THERMAL LIMITED AREA.
50 (SINGLE NONREPETITIVE
30 PULSE)
NO HEAT SINK
COLLECTOREMITTER SATURATION
VOLTAGE VCE (sat) (V)
TRANSIENT THERMAL RESISTANCE
rth (°C/W)
-0.01 0.5
-0.01 -0.03 -0.1 -0.3 -1 -3 -5 0.001 0.01 0.1 1 10 100 1000
COLLECTOR CURRENT 10 (A) PULSE WIDTH tw (s)
2 2001-10-29
TOSHIBA 2531640
SAFE OPERATING AREA PC - Ta
-10 ....... ..' llll E
IC MAX.(PULSED)r.'f l l l l V
- \ ' I I I I - Q
5 2, IrnskT. - a.
5 10 MAX. wms.x./h, l g
D (CONTINUOUS) 100ms)k. "t a
- 1 'u l E
ili; N 35”
[ii 'c, td
ie -0.3 DC OPERATION N r;
ttd (Ta=25°C) E
t 'ss. g
m -0.1 F
8 -0.05 ik. SINGLE NONREPETITIVE 'N g
PULSE Ta=25°C O
-0.03 CURVES MUST BE DERATED 0 25 50 75 100 125 150 175
LINEARLY WITH INCREASE AMBIENT TEMPERATURE Ta CC)
-0 01 IN TEMPERATURE. IVCEQ PF,
'U0.1 -1 -10 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-10-29
TOSHIBA 2531640
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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