2SB1574 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1578 ,Low freq. power amp., medium-speed switching transistorFEATURES• New package with dimensions in between those of small signaland power signal package Hig ..
2SB1580 , Power Transistor (−100V , −2A)
2SB1590K , Power Transistor (-15V, -1A)
2SB1599 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1612 ,Silicon PNP epitaxial planer type(For low-frequency amplification)Featuresn1.6– 0.2l Low collector to emitter saturation voltage V .CE(sat)l Mini Power type package, ..
2SD1428 ,Silicon NPN Power Transistors TO-3PH packageTOSHIBA 4H)TSCRETE:/0PT()y Si, s)ii:llruvri'aso DDDFIEI: Cl r9097250 TOSHIBA CDISCRETE/OPTO) 56C 07 ..
2SD1431 , NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
2SD1435 , Silicon NPN Power Transistors
2SD1437 , NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SD1437 , NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SD1439 ,SILICON NPN TRIPLE DIFFUSED JUNCTION MESA TYPE HORIZONTAL DEFLECTION OUTPUTAbsolute Maximum Ratings (Tc=25°C) ''iifi el g I t 1.1k0.1 ,. _ 0.8max "ll'Item I Symbol Value Umt ..
2SB1574
