2SB1572 ,PNP SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITCol ..
2SB1574 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1578 ,Low freq. power amp., medium-speed switching transistorFEATURES• New package with dimensions in between those of small signaland power signal package Hig ..
2SB1580 , Power Transistor (−100V , −2A)
2SB1590K , Power Transistor (-15V, -1A)
2SB1599 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1427 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1427# , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1428 ,Silicon NPN Power Transistors TO-3PH packageTOSHIBA 4H)TSCRETE:/0PT()y Si, s)ii:llruvri'aso DDDFIEI: Cl r9097250 TOSHIBA CDISCRETE/OPTO) 56C 07 ..
2SD1431 , NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
2SD1435 , Silicon NPN Power Transistors
2SD1437 , NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB1572
