2SB1557 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mm_15.9 MAx._, Jif3.? i 120 High Breakdown Voltage : VCEO = -140V (Min.)O Comp ..
2SB1561 , Medium Power Transistor (−60V, −2A)
2SB1569A , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1571 ,PNP epitaxial type silicon transistorELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITCol ..
2SB1572 ,PNP SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITCol ..
2SB1574 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1415A ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS Unit in mmHAMMER DRIVE, PULSE MOTOR DRIVE
2SD1415A ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS qftAftQ “7+0, TTa.nn0 High DC Current Gain: hFE = 2000 (Min.) (VCE = 3V, 1C = 3A)5.6 M ..
2SD1417 ,Silicon NPN Power Transistors TO-220Fa package
2SD1419 , Low frequency power amplifier Collector to base voltage VCBO 120 V
2SD1419DETL-E , Silicon NPN Epitaxial
2SD1419DETL-E , Silicon NPN Epitaxial
2SB1557
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
TOSHIBA 2581557
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
2SllilM55'7
POWER AMPLIFIER APPLICATIONS Unit in mm
0 High Breakdown Voltage .' VCEO = -140V (Min.) ct
0 Complementary to 2SD2386 rn.
MAXIMUM RATINGS (Tc = 25°C) g tl
CHARACTERISTIC SYMBOL RATING UNIT tn'
Collector-Base Voltage VCBO -140 V 5;,
Collector-Emitter Voltage VCEO -140 V 'l'cls
Emitter-Base Voltage VEBO -5 V 5.45t0.2 5.45:0.2
Collector Current IC -7 A x 22
Base Current IB -0.1 A g ELL” 2 x
Collector Power Dissipation l o Fr-r.'.'-..-)" --i'ii'
(Tc = 25°C) PC 70 W 1 2 3 f,s
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55r-150 °C "a.' ESiEECTOR (HEAT SINK)
3. EMITTER
EQUIVALENT CIRCUIT
JEDEC -
O COLLECTOR
er-------------------."-". JEITA -
BASE °—’—K—I: 5 TOSHIBA 2-16C1A
Weight : 4.7 g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -140V, IE = 0 - - -5.0 PA
Emitter Cut-off Current IEBO VEB = -5V, IC = 0 - - -5.0 PA
Collector-Emi; Breakdown
Voltage V(BR) CEO IC - -50 mA, 1B - 0 -140 - - V
h (N t ) V = -5V, I = -6A 5000 - 30000
DC Current Gain FE (1) o e CE C
hFE (2) VCE = -5V, IC = -IOA 2000 - -
Collector-Emi; Saturation
Voltage VCE (sat) 1C - -6A, 1B - -6rnA - - -2.5 V
Base-Emitter Voltage VBE VCE = -5V, 10 = -6A - - -3.0 V
Transition Frequency fT VCE = -5 V, IC = -1 A - 30 - MHz
Colle tor Out ut Ca a itan e C VCB = -10 V, IE = o, 120 F
C p p C C ob f = 1 MHz - - p
(Note) : hFE(1) Classification A .' 5000--12000, B : 9000--18000, C : 15000--30000
1 2001-10-29
TOSHIBA
COLLECTOR CURRENT 1C (A)
DC CURRENT GAIN hFE
COLLECTOR POWER DISSIPATION PC (W)
50000 EMITTER
30000 VCE = -5V
IC - VCE
COMMON EMITTER
Tc = 25°C
-450 -400, -350
13 = -50pA
0 - 2 - 4 - 6 - 8 - 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON
Te = 100°C
-0.03 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT 1C (A)
PC - Ta
Tc = Ta INFINITE HEAT SINK
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
COLLECTOR CURRENT 1C (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE (sat) (V)
-0.03-0.05 -0.1
IC - VBE
COMMON EMITTER
VCE = -5 v
Te = - 25''C
- 1 - 2 - 3 - 4 - 5
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB = 250
Te = -25''C
-0.3-0.5 -1 -3 -5 -10
COLLECTOR CURRENT 10 (A)
2001 -1 0-29
TOSHIBA 2581557
SAFE OPERATING AREA
IC MAX.(PULSED) .2f
- 10 - 10 msy.t.
2 -10 MAX. (CONTINUOUS) l
S? - 5 N N
H N \ 100 tns).K.
z N. \
E -3 Js,
i? EC 02:133ATION N,
ttd "s
8 N \ \
j )..k. SINGLE NONREPETITIVE l l
8 PULSE To = 25°C "N
-0 5 CURVES MUST BE DERATED \\ l _
. LINEARLY WITH INCREASE Ntl VCEO _
IN TEMPERATURE. N MAX.
-5 -10 -30 -50 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-10-29
TOSHIBA 2581557
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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