2SB1488 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1492 ,Trans Darlington PNP 110V 6AAbsolute Maximum Ratings (T =25˚C)n –C1.0– 0.2Parameter Symbol Ratings Unit0.6– 0.2Collector to ba ..
2SB1495 ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS Unit in mm1010.3 fb3.2t0.2 2,710.2l" -1O TThrh DC Current Gain [i-if-ar-T ---...,v vv- ..
2SB1496 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1537 ,Silicon PNP epitaxial planer typeFor low-frequency amplification)Absolute Maximum Ratings (Ta=25˚C) 321nParameter Symbol Ratings UnitmarkingCollector to base volta ..
2SB1539 ,Silicon PNP epitaxial planer type(For low-frequency amplification)Absolute Maximum Ratings (Ta=25˚C) 321nParameter Symbol Ratings UnitmarkingCollector to base volta ..
2SD1403 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1403 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1407A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SB1488
