2SB1481 ,Trans Darlington PNP 100V 4A 3-Pin(3+Tab) TO-220NISAPPLICATIONS Unit in mm1010.3 fb3.2t0.2 2,710.2l" -1O TThrh DC Current Gain [i-if-ar-T ---...,v vv- ..
2SB1488 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1492 ,Trans Darlington PNP 110V 6AAbsolute Maximum Ratings (T =25˚C)n –C1.0– 0.2Parameter Symbol Ratings Unit0.6– 0.2Collector to ba ..
2SB1495 ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS Unit in mm1010.3 fb3.2t0.2 2,710.2l" -1O TThrh DC Current Gain [i-if-ar-T ---...,v vv- ..
2SB1496 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1537 ,Silicon PNP epitaxial planer typeFor low-frequency amplification)Absolute Maximum Ratings (Ta=25˚C) 321nParameter Symbol Ratings UnitmarkingCollector to base volta ..
2SD1403 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1403 , Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1406 ,Silicon NPN Power Transistors TO-220Fa packageSILICON NPN TRIPLE DIFFUSED TYPEAUDIO FREQUENCY PORER AMPLIFIER APPLI¢ATIONSRUnit in mm
2SD1407A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SB1481
Trans Darlington PNP 100V 4A 3-Pin(3+Tab) TO-220NIS
TOSHIBA 2581481
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
25'1481
SWITCHING APPLICATIONS
0 High DC Current Gain
: hFE =2000 (Min.) (VCE = -2V, IC = - 1.5A)
0 Low Saturation Voltage : VCE (sat)" -1.5V (Max.) (IC-- -3A)
0 Complementary to 2SD2241
MAXIMUM RATINGS (Tc = 25°C)
0.75:0.15
CHARACTERISTIC SYMBOL RATING UNIT
2.54:0.25 2.54:0.25
Collector-Base Voltage VCBO - 100 V m m
q- 1 2 3 N' N
Colleetor-Emitter Voltage VCEO - 100 V f; - - It."
Emitter-Base Voltage VEBO -5 V t - 'O
D I i4
Collector Current C C A l. BASE
3. EMITTER
Base Current IB -0.3 A
o JEDEC -
Collector Power Ta=25 C P 2.0 W A
Dissipation Te = 25°C C 25 JEIT SC-67
TO HIBA 2-10R1A
J unction Temperature Tj 150 °C f
Storage Temperature Range Tstg -55-150 "C Weight . 1.7g (Typ.)
EQUIVALENT CIRCUIT
COLLECTOR
1 2001-10-29
TOSHIBA 2531481
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 100V, IE =0 - - -2.0 pA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 2.5 mA
Collector-Emi)
Breakdown Voltage V (BR) CEO IC - - lOmA, IB - 0 - 100 - - V
h V = -2V, I = -1.5A 2000 - -
DC Current Gain FE (1) CE C
hFE (2) VCE = -2V, IC = -3A 1000 - -
Collector-Emitter
Saturation Voltage VCE (sat) IC - - 3A, IB - - 6mA - - - 1.5 V
Base-Emitter - -
Saturation Voltage VBE (sat) IC - - 3A, IB - - 6mA - - - 2.0 V
Collector-Emi;
Reverse Voltage VECO IC - IA, IB - 0 - - 2.0 V
Turn-on Time ton IB2 1_Bg Ir- - - - - - _O_[_{TPUT - 0.15 -
. . IBI :
Switching INPUT tc, I
. F-l BI l - -
Time Storage Time tstg 20ps 0.80 ,us
. -1B1 =IB2 =6mA V = -30V
Fall Time tf DUTY CYCLES 1% CC - 0.40 -
2001 -1 0-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hpE
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
to <7!
IC - VCE
COMMON
EMITTER
Tc = 25''C
IE: -200pA
-1 -2 -3 -4 -5 -6
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hFE - 10
COMMON
EMITTER
VCE = - 2V
-0.3 -0.5 -1 -3 -5 -10
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
COMMON
EMITTER
1C / IB = 500
Tc = - 55°C
-0.3 -0.5 -1 -3 -5
COLLECTOR CURRENT IC (A)
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT 10 (A)
IC - VBE
f I COMMON
EMITTER
VCE = - 2V
Tc= 100°C 25 - -55
0 g///
0 -0.8 -1.6 -2.4 -3.2 -4.0
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON
EMITTER
IC / IB = 500
Te-- - 55''C
L'"0.1 -0.3 -0.5 -1 -3 -5
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
- 10 _
:IC MAX.(PULSED)).k.
5 I I I I I II I , h
- lllllll l l 1100ps).k.
-3-IC MAX. \ I III
_(CONTINUOUS) \ \ /1ms>:< _
\\ 3 mm
-1 _ 100msy.rf -
-0.5 sh
-0.3 NI l
- y.f SINGLE NONREPETITIVE N
PULSE Tc=25°C NN \ N
-0.1 E CURVES MUST BE DERATED
= LINEARLY WITH INCRESE
-0.05 -
0 03 - IN TEMPERATURE. VCEO MAX}
-a).3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2581481
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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