2SB1462J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1470 ,Power DeviceFeatures• Optimum for 120 W HiFi output(1.5)• High forward current transfer ratio hFE(1.5)• Low col ..
2SB1470. ,Power DevicePower Transistors2SB1470Silicon PNP triple diffusion planar type darlingtonUnit: mm20.0±0.5 5.0±0.3 ..
2SB1470.. ,Power DeviceAbsolute Maximum Ratings T = 25°C5.45±0.3C10.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SB1474 , Power Transistor (-80V, -4A)
2SB1474 , Power Transistor (-80V, -4A)
2SD1367 , Low frequency power amplifier. Collector to base voltage VCBO 20 V
2SD1368CBTL-E , Silicon NPN Epitaxial
2SD1381F , Power Transistor (80V, 1A)
2SD1381F , Power Transistor (80V, 1A)
2SD1384 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD1392 , NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR
2SB1462J
