2SB1457 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONSAPPLICATIONS m; MAX.POWER AMPLIFIER APPLICATIONZMAX.0 High DC Current Grain : hFE='200(Min.) (VCE= ..
2SB1462J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1470 ,Power DeviceFeatures• Optimum for 120 W HiFi output(1.5)• High forward current transfer ratio hFE(1.5)• Low col ..
2SB1470. ,Power DevicePower Transistors2SB1470Silicon PNP triple diffusion planar type darlingtonUnit: mm20.0±0.5 5.0±0.3 ..
2SB1470.. ,Power DeviceAbsolute Maximum Ratings T = 25°C5.45±0.3C10.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SB1474 , Power Transistor (-80V, -4A)
2SD1345 , isc Silicon NPN Power Transistor
2SD1347 ,NPN Epitaxial Planar Silicon Transistors Large-Current Driving ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1348 ,High Current Switching TransistorAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1351 , Silicon NPN Power Transistors
2SD1367 , Low frequency power amplifier. Collector to base voltage VCBO 20 V
2SD1368CBTL-E , Silicon NPN Epitaxial
2SB1457
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS
TOSHIBA 2581457
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON)
2SllilM45'7
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS 5.IMAX.
POWER AMPLIFIER APPLICATION Q
0 High DC Current Gain : hFE=200 (Min.) (VCE-- -2V, IC-- -IA) th75MAX.
1.0MAX. -
0 Low Saturation Voltage if Le
: VCE(sat)= -1.5V (Max.) (10: - IA, IB = - lmA) , i':.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 'd
Collector-Base Voltage VCBO -100 V “Mm _ 't ':
Collector-Emitter Voltage VCEO -100 V r ii-,'-.
. 1. EMITTER
Emitter-Base Voltage VEBO -8 V 2. COLLECTOR
DC I -2 3. BASE
Collector Current C A
Peak ICP - 3 JEDEC TO-92MOD
Base Current IB -0.5 A JEITA -
Collector Power Dissipation PC 900 mW TOSHIBA 2-5J1A
Junction Temperature Tj 150 "C Weight : 0.36g (Typ.)
Storage Temperature Range Tstg -55-150 "C
EQUIVALENT CIRCUIT
COLLECTOR
1 2001-10-29
TOSHIBA 2531457
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -80V, IE =0 - - - 10 PA
Emitter Cut-off Current IEBO VEB = - 8V, 10 = 0 - - - 4 mA
Collector-Emi)
Breakdown Voltage V(BR)CEO IC - - 10mA, 1B - 0 - 100 - - V
DC Current Gain hFE VCE = -2V, 1C = - IA (Pulse) 2000 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC - - IA, IB - - 1mA (Pulse) - - - 1.5 V
Base-Emitter
Saturation Voltage VBE(sat) IC - - IA, 1B - - 1mA (Pulse) - - - 2.0 V
Transition Frequency fT VCE = - 2V, IC = - 0.5A - 50 - MH
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 27 - pF
Turn-on Time ton 20ps INPUTLBg OUTPUT - 0.4 -
s h l") W
witc ing . 132 TIE
Time Storage Time tstg 1131le - 2.0 - ps
. -IBI =IB2 = 1mA VCC = - 30V
Fall Time tf DUTY CYCLESI% - 0.4 -
2001 -1 0-29
TOSHIBA
Ic (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
Is (A)
COLLECTOR CURRENT
IC - VCE
COMMON
EMITTER
- 1000 -800
, - Ta=25''C
- -.. -aa
IB-- -200PA
0 -1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
IC/IB = 1000
-0.3 -0.5 -1 -3 -5
COLLECTOR CURRENT 10 (A)
IC - VBE
COMMON EMITTER
VCE-- -2V
Ta=100°C 25 -55
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -3.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
DC CURRENT GAIN hFE
COMMON EMITTER
VCE = - 2V
-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT 10 (A)
VBE(sat) - IC
COMMON EMITTER
IC / 13 = 1000
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
-0.3 -0.5 -1 -3 -5
COLLECTOR CURRENT IC (A)
PC - Ta
COLLECTOR POWER DISSIPATION
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
2001 -1 0-29
TOSHIBA 2581457
SAFE OPERATING AREA
IC MAX.(PULSED)M l l l Hi
-3 , f f lt.
3:; l l 100par)K.
1ms)k.
Sir 1 y f
- h , _
E" . l
R; 10msM ' h h
‘33 -0.5 l
8 -0.3 l, l
'tci' X SINGLE NONREPETITIVE l \ N
'3 -0.1 PULSE Ta=25°C , h
g CURVES MUST BE DERATED
O -0.05 LINEARY WITH INCREASE
0 03 IN TEMPERATURE. VCEO M AX.
'Cog; -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
4 2001-10-29
TOSHIBA 2581457
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-10-29
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