2SB1432 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SB1432PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SB1434 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1435 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1440 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1440 ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustione ..
2SB1440 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca45˚3.0±0.15Parameter Symbol Rating UnitCollector-base voltage (E ..
2SD1308 , NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING INDUSTRIAL USE
2SD1312 ,NPN SILICON TRANSISTORFEATURES . 0 High total power dissipation and high breakdown voltage: (0293113.)
1.0 W at 25 °C am ..
2SD1313 ,POWER TRANSISTORS(25A,350V,200W)ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD1314 ,Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Power Switching Applications Motor Control ApplicationsApplications High DC current gain: h = 100 (min) (V = 5 V, I = 15 A) FE CE C Low saturatio ..
2SD1315 ,Si NPN triple diffused planar darlington. Medium speed power switching.Electrical Characteristics (Ta=25 "C)l 1 Base'2 I Collector3 I EmitterFull Pack PackageAtMtt2M/'Con ..
2SD1319 ,Si NPN triple diffused planar darlington. Medium speed power switching.Electrical Characteristics (Ta=25 'C) .Condition .abeffUtlgiRtitr, 1%=25V, 13:0cr.:ivfuat)Ntih', Ia ..
2SB1432
