2SB1429 ,Silicon PNP Power Transistors TO-3PL packageAbsolute Maximum Ratings (Ta = 25°C) 3CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO ..
2SB1429 ,Silicon PNP Power Transistors TO-3PL packageElectrical Characteristics (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNITColle ..
2SB1430 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SB1430PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SB1432 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SB1432PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SB1434 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1435 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1308 , NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING INDUSTRIAL USE
2SD1312 ,NPN SILICON TRANSISTORFEATURES . 0 High total power dissipation and high breakdown voltage: (0293113.)
1.0 W at 25 °C am ..
2SD1313 ,POWER TRANSISTORS(25A,350V,200W)ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD1314 ,Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Power Switching Applications Motor Control ApplicationsApplications High DC current gain: h = 100 (min) (V = 5 V, I = 15 A) FE CE C Low saturatio ..
2SD1315 ,Si NPN triple diffused planar darlington. Medium speed power switching.Electrical Characteristics (Ta=25 "C)l 1 Base'2 I Collector3 I EmitterFull Pack PackageAtMtt2M/'Con ..
2SD1319 ,Si NPN triple diffused planar darlington. Medium speed power switching.Electrical Characteristics (Ta=25 'C) .Condition .abeffUtlgiRtitr, 1%=25V, 13:0cr.:ivfuat)Ntih', Ia ..
2SB1429
Silicon PNP Power Transistors TO-3PL package
TOSHIBA
Discrete Semiconductors 2SB1429
Transistor Unit in mm
Silicon PNP Epitaxial Type (PCT Process) r--'-!?.::!.'..?,.'...'-'-'-- 33:02
- . . 3]
Power Amplifier Applications , - - u,
Features ) -... o 3
q Complementary to 2SD2155 3 'il :d N
q Recommend for 100W High Fidelity Audio Frequency N f I l
- Amplifier Output Stage 2.5 g
3.0 . tl,
Absolute Maximum Ratings (Ta = 25°C) +2.5 es
LO - 0.25 N
CHARACTERISTIC SYMBOL RATING UNIT .
5.4525115 545:0.15
Collector-Base Voltage VCBO -180 V
Collector-emitter Voltage VCEO -180 V eiei 2
Emitter-Base Voltage VEBO -5 V 'g. g g.
o -..-"
Collector Current IC -15 A : """""" "
Base Current IE -1.5 A
. . . l. 8 ASE
C II t P D t P 150 W
(T: 26:2:me GSlpil lon C 2. COLLECTOR ( H EAT s INK)
3. EM I TTER
J unction Temperature Tj 150 “C
St T t R T 55 150 c JEDEC -
r n - - t2
0raqelemperinlre am m SIAJ -
TOSHIBA 2-2triA
. . . Wei h t : 9 ' 7
Electrical Characteristics (Ta = 25°C) g g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current 'cso VCB = -180V, IE = 0 - - -51) WI
Emitter CM-oft Current IEBO VEB = -5V, lc = 0 - - -5.0 pA
Collector-emitter Breakdown Voltage V(BR) CEO) IC = -50mA, b--0 -180 - - V
oo Current Gain hpElmNm) VCE =-5V, IC = -1A 55 - 160
mm) Vce = -5v, IC = -6A 30 - -
Collector-Emitter VCEM) IC = -8A, IB = -0.8A - - -3.0 V
Satiration Voltage
Base-Emiter Voltage VBE VCE = -5V, IC = -6A - - -1.5 V
Transition Frequency fT VCE =-5V, IC = -1A - 10 - MHz
Collector Output Capacitance Cob Vas = -10V, IE = 0, f = 1MHz - 340 - pF
Note: hFE (1) Classification R : O: 55 - 110, C) .' 80 _ 160
TOSHIBA conponATloN 1/2
This Material Copyrighted By Its Respective Manufacturer
2SBI 429
COLLECTOR CURRENT 1C (A)
PC - Ta
Te - Ta
INFINITE HEAT SINK
it 25 50 " 100 1 150 l
AMBIENT TEMPERATURE Ta (°C)
COLLECTOR POWER DlSSIF‘ATION
hFE- ic
14 COMMON [h' COMMON zmnzn
- auxntn fl Mn veg: -shr
T =2st -
A _12 C g Tc WIT too T;
ts, 'E 1
:0 -io 3%
i5 I 50
I " c3) 30
O -5 D 10
g c0,01 -0.03 -0.t -oa -1 " 40-15
to" -4 -50 COLLECTOR CURRENT k; (A)
iii' -30 a' IC - VBE
CD Ia=-10mA l", COMMON EMITTER
i.2' VCE = 5V
o, -2 -4 " " -io ~12 -14 E
COLLECTOR-EMITTER VOLTAGE VCE (V) 'iii
a V V g 0 .9
Q. -5 CE (sat) - C g cc,
1... F- wr"' 25
I l Ae ~25
F] Ct? IC/IB=10 it]
if, ar.," -1 o
I S o -o.4 -thtl -L2 -l.6 -2.0 -2A
b' m '05 BASE-EMITTER VOLTAGE VBE (V)
0 -0.3
iii] SAFE OPERATING AREA
EE< - 1 -100
O F-. o.
F- LL -w
2 9 -,0-05 30 lg MAX.(PULSBD) -
ti "IU, -o.oa -o.1 -oa -1 -3 -1045 IC mx.(commuous)
-10 l ,
-3 6|, fo
-oa I swam muurnlnvs
PULSE Te 8 MT
-o.t mam MUST " nanny:
LINEARLY mm means:
-0.05 IN tmnmm.
"o..',., -1 " -10 ~30 -ttX) -3oo
C0LLECTOR-EMlTTER VOLTAGE VCE (V)
COLLECTOR CURRENT 'C (A)
The iniormat'on cmtained here s subject to change without notice
The ihiormal'm cor"tarTec) herein is presented oriy as guide for the appiications of our products. No responsibiiity is assumed by TOSHIBA for ary ir'iringements of patents or other rights of the [hire parties
whim may result from izs use No iicense is gramed uy i'vpiicaiion or otherwise uncer any patent or patent rights oi TOSHIBA or others These TOSHIBA products are imended for usage m general eieclroric
equipments (office equipment, commu"icali0h equipment. measuring equipment, domestic olocviiicalion, mo.) Pioasn make sure that you consul wlh us boiO'o you use those TOSHIBA products in equip,
meme which reqwe high quality ahd/or rei'abiiity, and in equipments which couid have major impacttothe welfare of human iife (atomic energy control, spaceship, traffic Sighai, combust'on control, all types
of safety devices, etc.). [OSHIBA cannot accept iiabiiily to any damage which may occur in case these IOSHIBA products were used in the mentioned equipments WimOLAE prior consultation With IOSHIBA.
2/2 TOSHIBA conponATloN
This Material Copyrighted By Its Respective Manufacturer
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