2SB1417 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C ––Parameter Symbol Ratings Unit1.2– 0.1C1.0Collector to 2SB1 ..
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100Q , Low VCE(sat) Transistor (−20V, −3A)
2SB1424T100Q , Low VCE(sat) Transistor (−20V, −3A)
2SD1275A ,Power Deviceapplications or generalelectronic equipment (such as office equipment, communications equipment, me ..
2SD1275A ,Power DeviceAbsolute Maximum Ratings T = 25°Ca+0.20.5–0.1Parameter Symbol Rating Unit0.8±0.12SD1275 V 60 VColl ..
2SD1276 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1276 V I ..
2SD1276A ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SD1276A ,Power Deviceapplications or generalelectronic equipment (such as office equipment, communications equipment, me ..
2SD1276A ,Power DeviceAbsolute Maximum Ratings T = 25°C1.3±0.2a1.4±0.1Parameter Symbol Rating Unit+0.20.5–0.10.8±0.12SD1 ..
2SB1417
