2SB1416 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1417 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C ––Parameter Symbol Ratings Unit1.2– 0.1C1.0Collector to 2SB1 ..
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100Q , Low VCE(sat) Transistor (−20V, −3A)
2SD1274 ,Silicon NPN triple diffusion planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C1.3– 0.2Parameter Symbol Ratings Unit 1.4– 0.12SD1274 150– +0 ..
2SD1274B ,Silicon NPN triple diffusion planar type(For power amplification)Features10.0– 0.2 4.2– 0.2n–5.5– 0.2 2.7– 0.2l High collector to base voltage VCBOl High-speed swit ..
2SD1275 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1275 V I ..
2SD1275 ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SD1275A ,Power Deviceapplications or generalelectronic equipment (such as office equipment, communications equipment, me ..
2SD1275A ,Power DeviceAbsolute Maximum Ratings T = 25°Ca+0.20.5–0.1Parameter Symbol Rating Unit0.8±0.12SD1275 V 60 VColl ..
2SB1416
