2SB1398 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1407 , Silicon PNP Epitaxial
2SB1413 ,TransistorAbsolute Maximum Ratings (Ta=25°C)2531413I Package Dimensions75:02 'F—iUnit 2 mm45:0210.810205$90'. ..
2SB1414 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1416 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1417 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C ––Parameter Symbol Ratings Unit1.2– 0.1C1.0Collector to 2SB1 ..
2SD1267 ,Power Deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SD1267 ,Power DeviceElectrical Characteristics T = 25°CCParameter Symbol Conditions Min Typ Max Unit2SD1267 I V = 60 V ..
2SD1268 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1269 ,Power DeviceFeaturesφ 3.1±0.1• Low collector-emitter saturation voltage VCE(sat)• Satisfactory linearity of for ..
2SD1269 ,Power DeviceAbsolute Maximum Ratings T = 25°C 0.8±0.1CParameter Symbol Rating Unit2.54±0.3Collector-base volta ..
2SD1270 ,Power DeviceAbsolute Maximum Ratings T = 25°C 0.8±0.1CParameter Symbol Rating Unit2.54±0.3Collector-base volta ..
2SB1398
