2SB1375 ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SB1375. ,Silicon PNP Power Transistors TO-220F package2531375AUDIO FREQUENCY POWER AMPLIFIER Unit in mm10+03 ¢32+02 2.710%O T.nw Qatnrntinn antnc‘n . Vnm ..
2SB1381 ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=1500(Min.)(VCE = -3V, IC = -2.5A)0 Lo ..
2SB1382 , Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)
2SB1386 T100Q , Low frequency transistor (−20V,−5A)
2SB1386T100Q , Low frequency transistor (−20V,−5A)
2SD1229 ,NPN Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1230 ,NPN Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1235 ,NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching ApplicationsOrdering number:1046BPNP/NPN Epitaxial Planar Silicon Transistors2SB919/2SD123530V/8A High-Speed Sw ..
2SD1237L ,NPN Epitaxial Planar Silicon Transistors 80V/7A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1245 ,SI NPN TRIPLE DIFFUSED PLANAR DARLINGTONFeaturesq ifaiyrtlifiytiltg+ hr.,.. grri','ivto/''High her;O cy V , f . "4.-- 15E]; vcnu hriis-tirx ..
2SD1246 ,High-current SwitchingAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1375-2SB1375.
Silicon PNP Power Transistors TO-220F package
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SllilM3'75
AUDIO FREQUENCY POWER AMPLIFIER
0 Low Saturation Voltage : VCE (sat)" -1.5V (Max.)
(10 = -2A, IB = -0.2A)
0 High Power Dissipation : PC225W (Tc=25°C)
0 Collector Metal (Fin) is Coverd with Mold Regin
0 Complementary to 2SD2012
0.75 10.15
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 2.54h0.25 2.
E9, 1 2 3 _Ԥ N
Collector-Base Voltage VCBO -60 V §:E_13
Collector-Emi) Voltage VCEO - 60 V 2 "'
Emitter-Base Voltage VEBO -7 V l. BASE
Collector Current 10 -3 A f.' fg'lig/"
Base Current IB - 0.5 A JEDE C -
g::;::i‘0:ower Ta - 25°C PC 2.0 W JEIT A -
. Te-- 25 C 25 TOSHIBA 2-10R1A
J unction Temperature Ti 150 C Weight : 1.7g (Typ.)
Storage Temperature Range Tstg -55--150 T
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 60V, IE = 0 - - - 10 pA
Emitter Cut-off Current IEBO VEB = - 7V, IC = 0 - - - 10 pA
Collector-Emi) - -
Breakdown Voltage V (BR) CEO IC - - 50mA, 1B - 0 -60 - - V
h = - I = - . A 1 - 2
DC Current Gain FE (1) VCE 5V, C 0 5 00 3 0
hFE (2) VCE = -5V, IC = -2A 15 - -
Collector Emitter
Saturation Vol tage VCE (sat) IC - - 2A, 1B - - 0.2A - - 1.0 - 1.5 V
Base-Emitter Voltage VBE VCE = - 5V, 10 = - 0.5A - - 0.75 - 1.0 V
Transition Frequency fT VCE = - 5V, IC = - 0.5A - 9 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = lMHz - 50 - pF
2001 -1 0-29
TOSHIBA
COLLECTOR CURRENT 10 (A)
COLLECTOR—EMITTER SATURATION
VOLTAGE vcmm) (V)
COLLECTOR POWER DISSIPATION
PC (W)
10 - VCE
IE: -10mA
COMMON EMITTER
Tc = 25°C
0 - 1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
-1 IC/IB=10
-0.3 Tc-- 100°C
-0.01 -0.03 -0.1 -0.3 -1 -3 -5
COLLECTOR CURRENT IC (A)
PC - Ta
(1) Tc=Ta
INFINITE HEAT SINK
(lf) WITHOUT HEAT SINK
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
DC CURRENT GAIN hm;
10 (A)
COLLECTOR CURRENT
TRANSIENT THERMAL RESISTANCE
10 (A)
COLLECTOR CURRENT
”J! (‘0 I W)
-3 10-2
hFE - IC
Tc=100°C
COMMON EMITTER
VCE = - 5V
-0.3 - 1
IC (A)
-0.03 -0.1 -3 -5
COLLECTOR CURRENT
IC - VBE
COMMON EMITTER
VCE = -51r
-0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE VBE (V)
rth - tw
C) Ta=25°C WITHOUT HEAT SINK
co Tc=25°C INFINITE HEAT SINK
IO-l 100 101 102
PULSE WIDTH tw (s)
SAFE OPERATING AREA
I l I ff
10 MAX.(PULSED)jk.
, I I . h \
IC MAX. \ lmsX
(CONTINUOUS) Pl
10ms>3
100ms)k. f
l l l l ( l
DC OPERATION \
(Te = 25°C)
IIIIIII
lllllll
CI -3 -5 -10
>:< SINGLE NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE DERATED VCEO -
LINEARLY WITH INCREASE A” MAX.
IN TEMPERATURE.
-30 -50 -100 -200
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2581375
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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