2SB1254 ,Power DeviceAbsolute Maximum Ratings T = 25°CC10.9±0.51: BaseParameter Symbol Rating Unit1232: CollectorCollec ..
2SB1255 ,Power DeviceAbsolute Maximum Ratings T = 25°CC10.9±0.51: BaseParameter Symbol Rating Unit1232: CollectorCollec ..
2SB1256 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1256 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1257 , Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)
2SB1258 , Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)
2SD1020 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation. (0.165 MAX.) (0.086 MAX.)
PT = 350 mW
. High hFE and l ..
2SD1022 , isc Silicon NPN Darlington Power Transistor
2SD103 , isc Silicon NPN Power Transistors
2SD1030 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1033 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3TYPICAL CHARACTERISTICS (Ta = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Pr — ..
2SD1046 ,NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1254
