2SB1220 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1220 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit1: BaseCollector-base voltage (Emitt ..
2SB1223 ,PNP Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1224 ,PNP Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1225 ,PNP Epitaxial Planar Silicon Darlington Transistor Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1227 ,PNP Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1000 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES
PACKAGE DIMENSIONS . World Standard Miniature Package
in millimeters (inches) _ 2 SOT--8 ..
2SD1000-T1 ,Silicon transistorFEATURES
PACKAGE DIMENSIONS . World Standard Miniature Package
in millimeters (inches) _ 2 SOT--8 ..
2SD1000-T2 ,Silicon transistorDATASHEET _ _'.
.NEC SILICON TRANSISTOR
" . . 2SDI ooo
NPN' SILICON EPITAXIAL TRANSISTOR
PO ..
2SD1001 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES .
PACKAGE DIMENSIONS . 0 World Standard Miniature Package
in millimeters (inches) : SOT- ..
2SD1001- ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta=25 oC)
CHARACTERISTIC SYMBOL TEST CONDITIONS
Collector Cutoff Cu ..
2SD1001-T1 ,Silicon transistorFEATURES .
PACKAGE DIMENSIONS . 0 World Standard Miniature Package
in millimeters (inches) : SOT- ..
2SB1220
