2SB1143 ,PNP Epitaxial Planar Silicon Transistors 50V/4A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1148 ,Power DeviceAbsolute Maximum Ratings T = 25°C 1.1±0.1C0.75±0.1 0.4±0.10.9±0.1Parameter Symbol Rating Unit2.3±0 ..
2SB1149 ,Suitable for use to operate from IC without Predriver, such as hammer driverDESCRIPTION The 2SB1149 is a darlington transistor built-in dumper diode
F EATU R ES
at E-C.
..
2SB1151 ,Low Collector Saturation VoltageFEATURES q Low Collector Saturation Voltage. "'ra.Eiar.lm (0.110 MAX.)
VCE(sat) = --0.14 V TYP. (@ ..
2SB1151 ,Low Collector Saturation VoltageELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
VCEI(sat)M
VBE(sat)M
hFE1**
f11:52”
hF53** ..
2SB1155 ,Silicon PNP epitaxial planar type(For power switching)Absolute Maximum Ratings (T =25˚C)n C2.0– 0.1–Parameter Symbol Ratings Unit1.1– 0.1 0.6– 0.2Collec ..
2SC5876T106Q , Medium power transistor (60V, 0.5A)
2SC5885 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC0.7±0.10.75±0.1Parameter Symbol Rating Unit2.54±0.2Collector-bas ..
2SC5885 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC5886A , High-Speed Switching Applications
2SC5890 , Silicon NPN Epitaxial UHF / VHF wide band amplifier
2SC5902 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SB1143
