2SB1135 ,PNP Epitaxial Planar Silicon Transistors 50V/7A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1140 ,PNP Epitaxial Planar Silicon Transistor 20V/5A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1142 ,PNP Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching ApplicationsOrdering number:2060APNP/NPN Epitaxial Planar Silicon Transistors2SB1142/2SD168250V/2.5A High-Speed ..
2SB1143 ,PNP Epitaxial Planar Silicon Transistors 50V/4A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1148 ,Power DeviceAbsolute Maximum Ratings T = 25°C 1.1±0.1C0.75±0.1 0.4±0.10.9±0.1Parameter Symbol Rating Unit2.3±0 ..
2SB1149 ,Suitable for use to operate from IC without Predriver, such as hammer driverDESCRIPTION The 2SB1149 is a darlington transistor built-in dumper diode
F EATU R ES
at E-C.
..
2SC5868 , Medium power transistor (60V, 0.5A)
2SC5876 , Medium power transistor (60V, 0.5A)
2SC5876 T106Q , Medium power transistor (60V, 0.5A)
2SC5876T106Q , Medium power transistor (60V, 0.5A)
2SC5885 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC0.7±0.10.75±0.1Parameter Symbol Rating Unit2.54±0.2Collector-bas ..
2SC5885 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SB1135
