2SB1115 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES
. World Standard MiniaturePackage
. Low VCE(sat). VCE(sat) = -0.2 V at 1 A
O Compleme ..
2SB1115 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oC)
. CHARACTERISTIC SYMBOL UNIT -d TEST CONDITIONS
_ --100 ..
2SB1115A ,80 V, 2 A, 2 W silicon transistorFEATURES
. World Standard MiniaturePackage
. Low VCE(sat). VCE(sat) = -0.2 V at 1 A
O Compleme ..
2SB1115A ,80 V, 2 A, 2 W silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
. CHARACTERISTIC SYMBOL UNIT -d TEST CONDITIONS
_ --100 ..
2SB1115A ,80 V, 2 A, 2 W silicon transistorDATA SHEET
SILICON TRANSISTORS
2531 1 1 5,2531 1 1 BA
PNP SILICON EPITAXIAL TRANSISTOR
PO ..
2SB1115A-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
. CHARACTERISTIC SYMBOL UNIT -d TEST CONDITIONS
_ --100 ..
2SC5669 ,NPN Bipolar Transistor for Audio Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5682 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5686 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector-bas ..
2SC5686 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5692 , High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5694 ,DC / DC Converter ApplicationsOrdering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2 ..
2SB1115-2SB1115A
