2SB1068 ,PNP SILICON TRANSISTORFEATURES. 0 Low Collector Saturation Voltage
VCEisat) :-0.25 V TYP. (IC =--1.0 A, Iss r=--10 mA) ..
2SB1068 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
hFE1 DC Current Gain 135 350 650
hFE2 DC Current Gain . ..
2SB1073 ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SB1073 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1073 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca45˚3.0±0.15Parameter Symbol Rating UnitCollector-base voltage (E ..
2SB1073-R , Silicon PNP epitaxial planer Transistors
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5620 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type
2SC5625 , FOR LOW FREQUENCY AMPLIFY APPLICATION
2SC5631 , Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
2SC5658 , General purpose transistor (50V, 0.15A)
2SB1068
