2SB1054 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SB1056 ,SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIERAbsolute Maximum Ratings ('faz25 'C)2SD1487 ‘fUnit 2 mm5.2max.15.5 x._ 69m? F2.“. mm. VCD21.0i0.52. ..
2SB1063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SB1064 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1067 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS.APPLICATIONSHigh DC Current Gain: hFE='2000(Min.)(VCE=-2V, IC=-1A) I -1,-tt-y:--ijrlhr--t 7" ll ILo ..
2SB1068 ,PNP SILICON TRANSISTORFEATURES. 0 Low Collector Saturation Voltage
VCEisat) :-0.25 V TYP. (IC =--1.0 A, Iss r=--10 mA) ..
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5620 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type
2SC5625 , FOR LOW FREQUENCY AMPLIFY APPLICATION
2SC5631 , Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
2SC5658 , General purpose transistor (50V, 0.15A)
2SB1054
