2SB1030 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SB1030 V I ..
2SB1031 , SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING
2SB1036 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1054 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SC5594 , Silicon NPN Epitaxial High Frequency Low Noise Amplifier
2SC5594 , Silicon NPN Epitaxial High Frequency Low Noise Amplifier
2SC5606 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5606-T1 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5609 ,Silicon PNP epitaxial planer typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 60 VCBOC ..
2SC5609 ,Silicon PNP epitaxial planer typeTransistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification+0.05 +0.050.33 ..
2SB1030
