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2SB1022TOSHIBAN/a474avaiSilicon PNP Power Transistors TO-220Fa package
2SC3559N/a400avaiSilicon NPN Power Transistors TO-220Fa package
2SD1409WINGSHINGN/a2000avaiSilicon NPN Power Transistors TO-220Fa package
2SD1410TOSN/a50avai6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1410TOSHABIN/a18avai6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1414KECN/a35avaiSilicon NPN Power Transistors TO-220Fa package


2SD1409 ,Silicon NPN Power Transistors TO-220Fa package
2SD1409A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit 1n mm_1010.3 ' (#32102 2,7ur0.2TThrh DC Current Gain . hum = 600 (Min)vv- - v--v- ..
2SD1410 ,6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1410 ,6A; 25W; V(ceo): 250V; NPN darlington transistor
2SD1410A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS.APPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE = 2000 (Min.) l F --(Vnw=2V- In=2A) t ..
2SD1413 ,Silicon NPN Power Transistors TO-220Fa package
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..


2SB1022-2SC3559-2SD1409-2SD1410-2SD1414
Silicon PNP Power Transistors TO-220Fa package
Application - 1
*MAX. Atr
IC“ V050 “£200 hFE I’VCE(sat)h[\/1AX‘ 1 . . fTTYP. . CobTYP. I. SWTirpeTYP.
W W M (W) ‘ V18? 11% M ('73 ('21. (MHz) ”(8? {£1 *1”??? IE!» 1:2? 111,1
0.1 1 1 0.2 _ _ _ _ _ v1.0 *25 11,0
0.8 1.0 0.8 0.15 _ — ' —. — — 410.3 11.5 “0.4
0.8 1.0 0.8 0.15 _ _ _ — — no.3 11.5 10.4
0.5 1.0 0.5 0.05 4 10 0.1 75 10 _ ._ 1.0
0.8 0.5 0.8 0.15 — — _ _ — A110 14.0 11.0
1 _ _ _ _ — 411.0 12.5 111.0
0.5 _ _ _ '_ _ no.3 11.5 10.3
0.8 — — — _ _ 411.0 12.5 '10
0.8 _ — — — _ 410.3 11.5 10.3
0,8 _ _ _ _ _ 410.3 11.5 10.3
Type No.
400 20 20MIN.
2 400 20 10MIN.
450 20 10MIN.
400 30 10MIN.
800 30 10MIN.
5 400 30 12MIN.
6 400 30 10MIN.
8 400 40 10MIN.
400 40 10MIN.
450 40 10MIN.
TOSHIBA f1)TSCRETE/0PTO3.
SWITCHING REG. 2503309
. 4 2501571
25c331o
- zsc3497
25c3525
mmmmmmmmm
DARLINGTON 2501413 1 2551023 3 40 20 2000MIN. 1.5 4m — — — — — 0.1/0.3 1.0/0.5 0.2/0.25
2501414 2551024 4 80 20 2000M] N. 1 .5 . 5m _ — — — — 02/015 1.5/0.8 0.6/0.4
_‘ 2501410 , 250 25 2000mm. 40m _ _ _ 35 50 1.0 8 5
2501409 1 400 25 500mm. 40m _ — — 35 50 1.0 8 ' 5
2501417 2551022 50 30 2000~15000 6m — - — .- — 0.8 3/2 2.5
2501415 2551021 7 80 30 2000~15000 6m _ _ _ — — 0.8 3/2 2.5
2501415 2551020 100 30 2000~15000 6m _ _ _ — — 0.8 3/2 2.5
va-crmmm
v-eC9CMt0ttD
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1:7 DE 5057850 0008050 8 Trc-sa-o:

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