2SB1020A ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS Unit in mm1010.3¢3.2:0.22.7i0.2High DC Current Gain: hFE =2000 (Min.) (at VCE = -3V, 1 ..
2SB1022 ,Silicon PNP Power Transistors TO-220Fa package
2SB1023 ,Silicon PNP Power Transistors TO-220Fa package
2SB1024 ,Silicon PNP Power Transistors TO-220Fa package
2SB1025 , Low frequency power amplifier Collector to base voltage VCBO -120 V
2SB1025 , Low frequency power amplifier Collector to base voltage VCBO -120 V
2SC5583 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Features• High breakdown voltage, and high reliability through the use of aglass passivation layer( ..
2SC5584 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5589 , NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5590 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)
2SC5592 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5594 , Silicon NPN Epitaxial High Frequency Low Noise Amplifier
2SB1020A
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
TOSHIBA 2SB1020A
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
2SlliiM020A
HIGH POWER SWITCHING APPLICATIONS Unit in mm
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
2102 2.7102
0 High DC Current Gain
: hFE=2000 (Min.) (at VCE= -3V, IC-- -3A)
5.6 MAX.
0 Low Saturation Voltage
: VCE (sat) = -1.5V (Max.) (at IC-- -3A)
13.0 MIN.
0 Complementary to 2SD1415A 0.75:0.15
2.54i 0.25 2.
MAXIMUM RATINGS (TC=25°C)
'/2 1 2 3 , N
CHARACTERISTIC SYMBOL RATING UNIT iii':--EEE D).'
Collector-Base Voltage VCBO -100 V t ‘i
Co11eetor-Emitter Voltage VCEO -100 V l. BASE
Emitter-Base Voltage VEBO -5 V 2. COLLECTOR
DC 1C -7 3. EMITTER
Collector Current Pulse ICP -10 A JEDE C -
Base Current IB -0.7 A JEITA -
Collector Power Ta=25°C PC 2.0 W TOSHIBA 2-10R1A
Dissipation Tc=25°C 30 Wei ht . 1 7 (T )
Junction Temperature Tj 150 "C g . . g yp.
Storage Temperature Range Tstg -55--150 "C
EQUIVALENT CIRCUIT
COLLECTOR
EMITTER
1 2001-10-29
TOSHIBA 2SB1020A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 100V, IE = 0 - - - 100 PA
Emitter Cut-off Current IEBO VEB = -5V, IC =0 - - -4.0 mA
Collector-Emi) Breakdown
Voltage V (BR) CEO IC - - 50mA, IB - 0 - 100 - - V
. hFE (1) VCE = - 3V, 10 = - 3A 2000 - 15000
DC Current Gain hFE (2) VCE = -3V, IC = -7A 1000 - -
Collector-Emitter Saturation VCE (sat) (1) IC = - 3A, IB = - 6mA - - 0.95 - 1.5 V
Voltage VCE (sat) (2) IC = - 7A, IB = - 14mA - - 1.3 - 2.0
Base-Emitter Saturation
Voltage VBE (sat) IC - - 3A, IB - - 6mA - - 1.55 - 2.5 V
Turn-on Time ton I r____QpTPUT - 0.8 -
1311'qu .122:
. . - t C}
Switching . IN- I l m
H BL - -
Time Storage Time tstg 20/s PUT I ,-, 2.0 ps
-1 =1 = 6mA, -=
Fall Time tf M/h' C§I2CLE§ 1% vggv - 2.5 -
2 2001 -1 0-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
10 (A)
CO LLECTOR CURREN T
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(saL) (V)
IC - VCE
COMMON EMITTER
Tc=25''C
- 2 - 4 - 6 - 8 - 10 - 12
C0LLECTORaMITTER VOLTAGE VCE (V)
IC - VCE
COMMON EMITTER
Tc = - 50°C
1B = - 0.5mA
- 2 - l - 6 - 8 - 10 - 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB=500
- 1 -3 - 10 -30
COLLECTOR CURRENT IC (A)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hFE
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
2SB1020A
IC - VCE
COMMON EMITTER
Tc = 100°C
13 = - 0.5mA
-4 -6 -8 -10 -12
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
VCE-- -3V
_ 1 -3 - 10 -30
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
COMMON EMITTER
IC / IB = 500
Tc = - 50°C
-1 -3 -10 -30
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA 2SB1020A
Ic - VBE rth - tw
COMMON ti CURVES SHOULD BE APPLIED IN THERMAL
2 EMITTER 5: LIMITED AREA.
' V - 3V 5, (SINGLE NONREPETITIVE PULSE)
S? CE-- - 'g co INFINITE HEAT SINK
td A (2) NO HEAT SINK
D Tc=100°C 25 m
0.001 0.01 0.1 1 10 100 1000
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2
PULSE WIDTH (s)
BASE-EMITTER VOLTAGE VBE (V) tw
SAFE OPERATING AREA
l l l l l Ill
IC MAX.(PULSED) lk.
-10, h
Hc MAX. x N N \100,us>2<
- I 1 N tu N Ah l
_5.(CONTI-\\ tV" l 1
A -NUOUS) \ X1 l
s -3 Ims.).).s ,
S? 10msyie l l
100 .);.e
.. l...” \\\ l
E DC OPERATION \ t y
g -1 Te=25''C V , x
O V, \
3 0.5 'tl
a -0.3 , t
y.4 SINGLE NONREPETITIVE \\
-0.1 PULSE Tc=25°C
CURVES MUST BE DERATED
0 05 LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO M AX.
-3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
4 2001-10-29
TOSHIBA 2SB1020A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-10-29
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