2SB1018A ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.2High Collector Current : IC = -7 ALow Collector Saturation Voltage ..
2SB1020A ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS Unit in mm1010.3¢3.2:0.22.7i0.2High DC Current Gain: hFE =2000 (Min.) (at VCE = -3V, 1 ..
2SB1022 ,Silicon PNP Power Transistors TO-220Fa package
2SB1023 ,Silicon PNP Power Transistors TO-220Fa package
2SB1024 ,Silicon PNP Power Transistors TO-220Fa package
2SB1025 , Low frequency power amplifier Collector to base voltage VCBO -120 V
2SC5583 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Features• High breakdown voltage, and high reliability through the use of aglass passivation layer( ..
2SC5584 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5589 , NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5590 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)
2SC5592 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5594 , Silicon NPN Epitaxial High Frequency Low Noise Amplifier
2SB1018A
Silicon PNP Power Transistors TO-220F package
TOSHIBA
2SB1018A
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS
POWER AMPLIFIER APPLICATIONS
0 High Collector Current : IC = -7 A
0 Low Collector Saturation Voltage
.' VCE (sat) = -0.5V(Max.) (IC = -4A)
0 Complementary to 2SD1411A
MAXIMUM RATINGS (Tc = 25°C)
2Slril01l8A
Unit in mm
0.75*0.15
254i025
OJSiOJS
1 2 3 d
=fEE It'.,
,2102 2.7h0.2
110MW,
254t025
1. BASE
2. COLLECTOR
3. EMITTER
TOSHIBA
2-10R1A
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Collector Current 10 -7 A
Base Current IB -1 A
Collector Power Ta = 25°C 2.0
. . . PC W
Dissipation Te = 25°C 30
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -55--150 'C
Weight
: 1.7g (Typ.)
2001 -1 0-29
TOSHIBA 2581018A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -100V, IE = 0 - - -5 PA
Emitter Cut-off Current IEBO VEB = -5V, IC = 0 - - -5 PA
Collector-Emitter
Breakdown Voltage V (BR) CEO 1C - -50 mA, 1B - 0 -80 - - V
hFE (1)
= -1 I = -1A - 24
DC Current Gain (Note) VCE V, C 70 0
hFE (2) VCE = -1V,IC = -4A 30 - -
Saturation Collector-Emitter VCE (sat) IC = -4A, IB = -0.4A - -0.3 -0.5 V
Voltage Base-Emitter VBE (sat) IC = -4A, 1B = -0.4A - -0.9 -1.4
Transition Frequency fT VCE = -4V, IC = -1 A - 10 - MHz
. VCB= -10V,IE=0,
Collector Output Capacitance Cob f = 1 MHz - 250 - pF
Turn-on Time ton 20 ps 122 OUTPUT - 0.4 -
INPUT - ce
Switching 15mm BI H
. Stora e Time tst I - 2.5 - s
Time g g BI VCC = -30V ’1
-IBI = 1132 = 0.3 A,
. - 0.5 -
Fall Time tf DUTY CYCLE s 1%
(Note) 2 hFE(1) Classification o .' 70--140, Y l 120--240
2001 -1 0-29
TOSHIBA
2SB1018A
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER, VOLTAGE VCE (V)
DC CURRENT GAIN hFE
IC - VCE
COMMON
EMITTER
Tc = 25°C
0 -2 -4 - 6 -8 - 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VCE
COMMON
EMITTER
Tc = 100°C
IB-- -20mA -40 -100
o -1 -2 -3 -4 -5 -6 -7
COLLECTOR CURRENT 10 (A)
hFE - IC
COMMON
EMITTER
500 VCE = -IV
300 Te = 100°C
-0.003 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMI’I‘TER VOLTAGE VCE
vCE (sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE
VCE - 10
COMMON
EMITTER
- 1.0 Te = 25°C
1B = -20mA
-40 - 100 -200
o -1-2 -3 -4 -5 -6 -7
COLLECTOR CURRENT IC (A)
VCE - IC
COMMON
EMITTER
Tc = -55'C
-100 -150
0 - l - 2 - 3 - 4 - 5 - 6 - 7
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
COMMON
EMITTER
-0.5 IC/IB = 10
Tc = 100°C
-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA 2SB1018A
VBE(sat) - IC IC - VBE
COMMON Tc = 100°C I COMMON
EMITTER EMITTER
I L _ -55
IC/IB= 10
VCE---1v
1C (A)
Tc = -55'C
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT 10 (A) 0 - 0.8 - 1.6 -2.4 - 3.2
SAFE OPERATING ARE A BASE-EMITTER VOLTAGE VBE (V)
l \lllllll
1C MAX. (PULSED) )K.
-10 i 1 1 a , _ 1 yd.
tt1S5.N
_ I I I l , N N
10 MAX. h .
AC0NTINU0US) , \ \ 00 ms)if
I I I N
-3 DCI '1913E122‘FCION Ft,, N
")((N, N
COLLECTOR CURRENT
-0.5 X SINGLE NONREPETITIVE N A
- 0.3 PULSED Te = 25°C NIN)
CURVES MUST BE DERATED SN
LINEARLY WITH INCREASE N
-0.1 IN TEMPERATURE. vcrto yy/N
-1 -3 -10 -30 -100
COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
rth - tw
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE) NO HEAT SINK
INFINITE HEAT SINK
TRANSIENT THERMAL RESISTANCE
rth (°C/W)
.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
4 2001-10-29
TOSHIBA 2531018A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-10-29
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