2SB1016A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) g g ypCHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-o ..
2SB1018 , Silicon PNP Power Transistors
2SB1018A ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.2High Collector Current : IC = -7 ALow Collector Saturation Voltage ..
2SB1020A ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS Unit in mm1010.3¢3.2:0.22.7i0.2High DC Current Gain: hFE =2000 (Min.) (at VCE = -3V, 1 ..
2SB1022 ,Silicon PNP Power Transistors TO-220Fa package
2SB1023 ,Silicon PNP Power Transistors TO-220Fa package
2SC5577 ,Horizontal Deflection Switching TransistorsFeatures Package Dimensions · High speed (t =100ns typ).f unit:mm · High breakdown voltage (V =1500 ..
2SC5583 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Features• High breakdown voltage, and high reliability through the use of aglass passivation layer( ..
2SC5584 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5589 , NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5590 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)
2SC5592 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1016A
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS
TOSHIBA 2531016A
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
2Slril01ltiA
POWER AMPLIFIER APPLICATIONS Unit in mm
0 High Breakdown Voltage : VCEO= -100V
0 Low Collector-Emi) Saturation Voltage
: VCE (sat)" -2.0V (Max.)
0 Complementary to 2SD1407A
MAXIMUM RATINGS (Tc=25°C)
0.75 10.15
CHARACTERISTIC SYMBOL RATING UNIT 2.5“ 0.25 2.54 , 0.25
Collector-Base Voltage VCBO -100 V '/2 1 2 3 u?
Collector-Emitter Voltage VCEO -100 V 'i:HeEE jg;
Emitter-Base Voltage VEBO -5 V (f',. - 3
Collector Current IC -5 A
Base Current IE -0.5 A ; 'ltihc,o,
CTOIIECZtgorCPower Dissipation PC 30 W 3. EMITTER
f c= . "l, T 150 "C JEDEC -
unction emperature J o JEIT A -
Storage Temperature Range Tstg -55-150 C
TOSHIBA 2-10R1A
Wei ht : 1.7 (T .)
ELECTRICAL CHARACTERISTICS (Tc=25°C) g g yp
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 100V, IE = 0 - - - 100 PA
Emitter Cut-off Current IEBO VEB = -5V, 10 =0 - - -1 mA
Collector-Emi)
Breakdown Voltage V (BR) CEO IC - - 50mA, IB - 0 - 100 - - V
hFE (1)
V = -5V, I = -1A 70 - 240
DC Current Gain (Note) CE C
hFE (2) VCE = -5V, 10 = -4A 20 - -
Collector-Emi;
Saturation Voltage VCE (sat) IC - -4A, 1B - -0.4A - - -2.0 V
Base-Emitter Voltage VBE VCE = -5V, 10 = -4A - - - 1.5 V
Transition Frequency fT VCE = -5V, 10 = - IA - 5 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = lMHz - 270 - pF
(Note) : hFE (1)
Classification 0 : 70--140, Y : 120-240
2001 -1 0-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
COLLECTOR POWER DISSIPATXON
DC CURRENT GAIN hFE
PC (W)
IC - VCE
IB = -20mA
COMMON EMITTER
Te = 25°C
0 - 1 - 2 - 3 - 4 - 5 - 6 - 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
Tc=75°C
100 25
COMMON
EMITTER
10 VCE---5V
-0.03 -0.1 -0.3 -1 -3 -5
COLLECTOR CURRENT 10 (A)
PC -Ta
Te = Ta
INFINITE HEAT SINK
0 25 5O 75
100 125
AMBIENT TEMPERATURE Ta
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE Velma“) (V)
COLLECTOR CURRENT
2SB1016A
IC - VBE
COMMON EMITTER
VCE = -5V
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
COMMON
EMITTER
-1 IC/IB=10
-0.01 -0.03 -0.1 -0.3 -1 -3 -5
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
IC MAX.(PULSED)X
h , ll X
_ \ l l ms
-Ic MAX.(CONTINUOUS)\ l l
- . 1 y.' -
5 i N1s.y.A ' OmsX -
's \ \/100ms><
-3 'N r, "
- DC OPERATION l
(Tc=25°C) 'ss, l l \
-1 N \ r
.)k. SINGLE NONREPETITIVE Nc \
-0.5 PULSE Tc=25°C l l
. CURVES MUST BE
DERATED LINEARLY WITH , \
INCREASE IN ,
0 1 TEMPERATURE. VCEO MAX. N
-10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2531016A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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