2SB1015 ,Silicon PNP Power Transistors TO-220Fa packageAPPLICATIONS Unit in mmI_1010.3 _1 fb3.2t0.2 2710.20 T.nw Cnnnntnr Qatnrntinn antnc‘n . Vnm 1,...“ ..
2SB1015A ,Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier ApplicationsApplications Unit: mm Low collector saturation voltage: V = −1.7 V (max) CE (sat) (I = −3 A ..
2SB1016A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) g g ypCHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-o ..
2SB1018 , Silicon PNP Power Transistors
2SB1018A ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.2High Collector Current : IC = -7 ALow Collector Saturation Voltage ..
2SB1020A ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS Unit in mm1010.3¢3.2:0.22.7i0.2High DC Current Gain: hFE =2000 (Min.) (at VCE = -3V, 1 ..
2SC5566-TD-E , Bipolar Transistor
2SC5567 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5568 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5569 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5570 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5570 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SB1015
Silicon PNP Power Transistors TO-220Fa package
TOSHIBA 2531015A
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
2SlrillllM5A
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
0 Low Collector Saturation Voltage : VCE (sat) = -1.7 V(Max.)
(IC = -3A, 1B = -0.3 A)
0 Collector Power Dissipation : PC = 25W (Tc = 25°C)
MAXIMUM RATINGS (Ta = 25°C)
0.75 10.15
CHARACTERISTIC SYMBOL RATING UNIT 2 54& 0 25
Collector-Base Voltage VCBO -60 V ',2 I'.
fy1.rtotEmi?y,' Voltage VCEO -60 V ii-fr-sc/cpl 1%
Emitter-Base Voltage VEBO -7 V d lli_t3l, st'
Collector Current IC -3 A 1 BASE
Collector Power Ta = 25°C 2.0 3. EMITTER
. . . PC W
Dissipation Te = 25°C 25 JEDEC -
Junction Temperature Tj 150 "C EIA J SC-67
Storage Temperature Range Tstg -55--150 "C
TOSHIBA 2-10R1A
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-03-30 1/3
TOSHIBA
253 1 01 5A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -60 V, IE = 0 - - -100 PA
Emitter Cut-off Current IEBO VEB = -7V, 1C = 0 - - -100 pA
Collector-Emitter
Breakdown Voltage V(BR) CEO IC - -50 mA, 1B - 0 -60 - - V
hFE(1)
V = - V I = -0. A 60 - 20
DC Current Gain (Note) CE 5 ' C 5 0
hFE (2) VCE - -5V, IC = -3A 20 - -
Collector-Emir
Saturation Voltage VCE (sat) IC - -3 A, IB - -0.3 A - -0.5 -1.7 V
Base-Emitter Voltage VBE VCE = -5A, IC = -0.5A - -0.7 -1.0 V
Transition Frequency fT VCE = -5V, IC = -0.5A - 9 - MHz
Collector Output Capacitance Cob VCB = -10V, IE = o, f = 1 MHz - 150 - pF
Turn-on Time ton ILIq-IBZ 1B1 OUTPUT - 0.4 -
IB1 H INPUT oi-iv-sv-fir?),',
Switchin . I
Time g Storage Time tstg 20 ,us B2 ,-4 - 1.7 - gs
VCC = -30 V
Fall Time tf -IBI = 1132 = 0.2 A, - 0.5 -
DUTY CYCLE s 1%
(Note) : hFE (1) Classification
60--120, Y : 100--200
1999-03-30 2/3
TOSHIBA
IC - VCE
COMMON
2 EMITTER
v -60 Te = 25°C
“5 -30
g3 IB = -10 mA
o -1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
500 VCE = _5v
ji) Tc = 100°C
C) -25
‘53 100
-0.02 -0.1 -0.3 -1 -3
COLLECTOR CURRENT 10 (A)
Rth (t) - tw
(1) WITHOUT HEAT SINK
(2) INFINITE HEAT SINK
(1) Ta = 25°C
(2) Tc = 25°C
TRANSIENT THERMAL RESISTANCE
Rth(t) (°C/W)
10-3 10-2 IO-r l 10 102
TIME t (s)
2SB1015A
IC - VBE
/ / COMMON
EMITTER
VCE = -liir
10 (A)
Tc = 100°C 25
-1.0 / /
0 -0.4 -0.8 -1.2 -1.6
BASE-EMITTER VOLTAGE VBE (V)
CO LLECTOR CURREN T
VCE (sat) - IC
COMMON EMITTER
Ic/ IB = 10
(sat) (V)
VOLTAGE VCE
COLLECTOR-EMITTER SATURATION
-0.02 -0.1 -0.3 -1 -3 -5
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
-10 I I I I I I I I I II
:10 MAX.(PULSED)).k 1 ms)k.
A I I I I l l l 10msyd.
s -5_ I I I I I I (jf 100ms)k.
Q IC MAX.(CONTINUOUS) w.
; -3 _ "N, )N 1 Skt.
E \ x t ‘I
5 DC OPERATION\ Is, l)
D To = 25°C
0 1 I I I I I III N. \ t it
ttt - N h ,
g yd. SINGLE NONREPETITIVE 's t
g PULSE Te = 25''C N)
g -0.5 CURVES MUST BE DERATED l
o LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
-1 -3 -10 -30 -100
C0LLECT0RaMITTER VOLTAGE VCE (V)
1999-03-30 3/3
www.ic-phoenix.com
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