2SB710A ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1.9±0.1+0.20Parameter Symbol Rating Unit2.90–0.052SB0710 V −30 V ..
2SB716 , Silicon PNP Epitaxial
2SB720 , isc Silicon PNP Power Transistor
2SB733 ,PNP SILICON TRANSISTORFEATURES
audio frequency amplifiers.
. High D.C. Current Gain'
The 288733 is designed for ..
2SB734 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 ''C)
CHARACTER ISTIC
DC Current Gain
DC Current Gain
Ga ..
2SB736 ,AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)FEATURES
0 Micro package.
1 , High DC current gain. hFE : 200 TYP. (I/ce =- 1.0 V, IC =- sd m ..
2SD1694 ,NPN SILICON POWER TRANSISTORFEATURES
The 2SD1694 is High hFE and Low VcEisat) transistor.
hammer driver.
0 High DC Cur ..
2SD1695 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SD1695NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SD1697 , NPN SILICON TRANSISTOR
2SD1697 , NPN SILICON TRANSISTOR
2SD1699 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oC)
***Pu|sed: PW s 350 us, Duty Cycle s 2 %
hFE Classifi ..
2SD1699-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
***Pu|sed: PW s 350 us, Duty Cycle s 2 %
hFE Classifi ..
2SB0710-2SB0710A-2SB710A
